PDTC143EE Todos los transistores

 

PDTC143EE . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PDTC143EE
   Código: 2
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 4.7 kOhm
   Resistencia Base-Emisor R2 = 4.7 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 2.5 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SOT416
 

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PDTC143EE Datasheet (PDF)

 ..1. Size:56K  motorola
 pdtc143ee 2.pdf pdf_icon

PDTC143EE

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC143EENPN resistor-equipped transistor1998 Jul 31Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EEFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification of circuit desig

 ..2. Size:56K  philips
 pdtc143ee 2.pdf pdf_icon

PDTC143EE

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC143EENPN resistor-equipped transistor1998 Jul 31Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EEFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification of circuit desig

 6.1. Size:57K  motorola
 pdtc143ek 2.pdf pdf_icon

PDTC143EE

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC143EKNPN resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jun 16File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EKFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3 Simplificati

 6.2. Size:58K  motorola
 pdtc143eu 3.pdf pdf_icon

PDTC143EE

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC143EUNPN resistor-equipped transistor1999 Apr 14Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EUFEATURES Built-in bias resistors R1 and R2typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design

MOSTRAR MÁS

Otros transistores... PDTC124TE , PDTC124TM , PDTC124TT , PDTC124TU , PDTC124XE , PDTC124XM , PDTC124XT , PDTC124XU , TIP31C , PDTC143EM , PDTC143ET , PDTC143EU , PDTC143TE , PDTC143TM , PDTC143TT , PDTC143TU , PDTC143XE .

History: 2N1211

 

 
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