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PDTC143TE . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PDTC143TE
   Código: 40
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 4.7 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 2.5 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT416
 

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PDTC143TE Datasheet (PDF)

 0.1. Size:134K  nxp
 pdtc143tef pdtc143tk pdtc143ts.pdf pdf_icon

PDTC143TE

DISCRETE SEMICONDUCTORS DATA SHEETPDTC143T seriesNPN resistor-equipped transistors; R1 = 4.7 k, R2 = openProduct data sheet 2004 Aug 06Supersedes data of 2004 Apr 06NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC143T seriesR1 = 4.7 k, R2 = openFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

 6.1. Size:51K  motorola
 pdtc143tt 2.pdf pdf_icon

PDTC143TE

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTC143TTNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 29Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143TTFEATURES PINNING Built-in bias resistor R1 (typ. 4.7 k)PIN DESCRIPTION Simplification of circuit design1 base/input

 6.2. Size:174K  philips
 pdtc143t series.pdf pdf_icon

PDTC143TE

DISCRETE SEMICONDUCTORS DATA SHEETPDTC143T seriesNPN resistor-equipped transistors; R1 = 4.7 k, R2 = openProduct data sheet 2004 Aug 06Supersedes data of 2004 Apr 06NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC143T seriesR1 = 4.7 k, R2 = openFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

 6.3. Size:51K  philips
 pdtc143tt 2.pdf pdf_icon

PDTC143TE

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTC143TTNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 29Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143TTFEATURES PINNING Built-in bias resistor R1 (typ. 4.7 k)PIN DESCRIPTION Simplification of circuit design1 base/input

MOSTRAR MÁS

Otros transistores... PDTC124XE , PDTC124XM , PDTC124XT , PDTC124XU , PDTC143EE , PDTC143EM , PDTC143ET , PDTC143EU , 2SA1837 , PDTC143TM , PDTC143TT , PDTC143TU , PDTC143XE , PDTC143XM , PDTC143XT , PDTC143XU , PDTC143ZE .

History: L8550HSLT1G

 

 
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