2N5656 Todos los transistores

 ..1. Size:176K  motorola
 2n5655-57 2n5655 2n5656 2n5657.pdf

Order this document MOTOROLA by 2N5655/D SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 Plastic NPN Silicon 2N5657 High-Voltage Power Transistor . . . designed for use in line operated equipment such as audio output amplifiers; low current, high voltage converters; and AC line relays. 0.5 AMPERE POWER TRANSISTORS Excellent DC Current Gain hFE = 30 250 @ IC = 100 mAdc NP

 ..2. Size:121K  jmnic
 2n5655 2n5656 2n5657.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5655 2N5656 2N5657 DESCRIPTION With TO-126 package High breakdown voltage APPLICATIONS For use in line-operated equipment such as audio output amplifiers; low-current ,high-voltage converters; and AC line relays PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Bas

 ..3. Size:117K  inchange semiconductor
 2n5655 2n5656 2n5657.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5655 2N5656 2N5657 DESCRIPTION With TO-126 package High breakdown voltage APPLICATIONS For use in line-operated equipment such as audio output amplifiers; low-current ,high-voltage converters; and AC line relays PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting bas

 ..4. Size:190K  inchange semiconductor
 2n5656.pdf

isc Silicon NPN Power Transistors 2N5656 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 300V(Min) CEO(SUS) Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and

 9.1. Size:497K  st
 2n5657.pdf

2N5657 SILICON NPN TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package. It is intended for use output amplifiers, low current, high voltage converters and AC line relays. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un

 9.2. Size:44K  njs
 2n5653 2n5654.pdf

 9.3. Size:119K  onsemi
 2n5655g.pdf

2N5655G, 2N5657G Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and http //onsemi.com AC line relays. 0.5 AMPERE Features POWER TRANSISTORS Excellent DC Current Gain NPN SILICON High Current-Gain - Bandwidth Product 250-350 VOLTS, 20 WATT

 9.4. Size:80K  onsemi
 2n5655 2n5657.pdf

2N5655, 2N5657 Plastic NPN Silicon High-Voltage Power Transistor These devices are designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and http //onsemi.com AC line relays. 0.5 AMPERE Features POWER TRANSISTORS Excellent DC Current Gain - NPN SILICON hFE = 30-250 @ IC = 100 mAdc 250-350 VOLTS, 20 WATTS Current

 9.5. Size:80K  onsemi
 2n5657g.pdf

2N5655, 2N5657 Plastic NPN Silicon High-Voltage Power Transistor These devices are designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and http //onsemi.com AC line relays. 0.5 AMPERE Features POWER TRANSISTORS Excellent DC Current Gain - NPN SILICON hFE = 30-250 @ IC = 100 mAdc 250-350 VOLTS, 20 WATTS Current

 9.6. Size:175K  onsemi
 2n5655g 2n5657g.pdf

2N5655G, 2N5657G Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and http //onsemi.com AC line relays. 0.5 AMPERE Features POWER TRANSISTORS Excellent DC Current Gain NPN SILICON High Current-Gain - Bandwidth Product 250-350 VOLTS, 20 WATT

 9.7. Size:94K  ssdi
 2n5659.pdf

 9.8. Size:53K  inchange semiconductor
 2n5657.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5657 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 350V(Min) DC Current Gain- hFE= 30-250@IC= 0.1A Low Saturation Voltage APPLICATIONS Designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and AC

 9.9. Size:195K  inchange semiconductor
 2n5655.pdf

isc Silicon NPN Power Transistors 2N5655 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) DC Current Gain- h = 30-250@I = 0.1A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated equipment such as audio output amplifiers; low-current, high-