2N5656 - описание и поиск аналогов

 

2N5656. Аналоги и основные параметры

Наименование производителя: 2N5656

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 20 W

Макcимально допустимое напряжение коллектор-база (Ucb): 300 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V

Макcимальный постоянный ток коллектора (Ic): 0.5 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 10 MHz

Статический коэффициент передачи тока (hFE): 30

Корпус транзистора: TO126

 Аналоги (замена) для 2N5656

- подборⓘ биполярного транзистора по параметрам

 

2N5656 даташит

 ..1. Size:176K  motorola
2n5655-57 2n5655 2n5656 2n5657.pdfpdf_icon

2N5656

Order this document MOTOROLA by 2N5655/D SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 Plastic NPN Silicon 2N5657 High-Voltage Power Transistor . . . designed for use in line operated equipment such as audio output amplifiers; low current, high voltage converters; and AC line relays. 0.5 AMPERE POWER TRANSISTORS Excellent DC Current Gain hFE = 30 250 @ IC = 100 mAdc NP

 ..2. Size:121K  jmnic
2n5655 2n5656 2n5657.pdfpdf_icon

2N5656

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5655 2N5656 2N5657 DESCRIPTION With TO-126 package High breakdown voltage APPLICATIONS For use in line-operated equipment such as audio output amplifiers; low-current ,high-voltage converters; and AC line relays PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Bas

 ..3. Size:117K  inchange semiconductor
2n5655 2n5656 2n5657.pdfpdf_icon

2N5656

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5655 2N5656 2N5657 DESCRIPTION With TO-126 package High breakdown voltage APPLICATIONS For use in line-operated equipment such as audio output amplifiers; low-current ,high-voltage converters; and AC line relays PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting bas

 ..4. Size:190K  inchange semiconductor
2n5656.pdfpdf_icon

2N5656

isc Silicon NPN Power Transistors 2N5656 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 300V(Min) CEO(SUS) Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and

Другие транзисторы: 2N5644, 2N5645, 2N5646, 2N565, 2N5650, 2N5651, 2N5652, 2N5655, 9014, 2N5657, 2N5658, 2N5659, 2N566, 2N5660, 2N5661, 2N5662, 2N5663

 

 

 

 

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