PHE13009 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTIONThe PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in highfrequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITI

WeEn Semiconductors Product data sheet Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTIONThe PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in highfrequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. M

PHE13003ANPN power transistorRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package.1.2 Features and benefits Fast switching High voltage capability of 700 V1.3 Applications Compact fluorescent lamps (CFL) Inverters Electronic

Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13003AU GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended foruse in high frequency electronic lighting ballast applications, converters and inverters, etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Col

Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended foruse in high frequency electronic lighting ballast applications, converters and inverters, etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Col

Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13005 GENERAL DESCRIPTIONThe PHE13005 is a silicon npn power switching transistor in the TO220AB envelope intended for use in highfrequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS

PHE13003CNPN power transistorRev. 1 29 July 2010 Preliminary data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package.1.2 Features and benefits Fast switching High voltage capability of 700 V High typical DC current gain1.3 Applications Compact fluorescent l

PHE13005Silicon diffused power transistorRev. 03 20 November 2009 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed NPN planar-passivated power switching transistor in a SOT78 plastic package intended for use in high frequency electronic lighting ballast applications1.2 Features and benefits Fast switching Low thermal resistance High volt

Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTIONThe PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in highfrequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS

PHE13005XSilicon diffused power transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionHigh-voltage, high-speed planar-passivated, NPN power switching transistor in a full pack plastic package for use in high frequency electronic lighting ballast applications1.2 Features and benefits Fast switching Isolated package High voltage capab

PHE13003ANPN power transistor3 October 2016 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92)plastic package.2. Features and benefits Fast switching High voltage capability Very low switching and conduction losses3. Applications Compact fluorescent lamps (CFL) Electronic li

PHE13003CNPN power transistor13 October 2016 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92)plastic package.2. Features and benefits Fast switching High typical DC current gain High voltage capability of 700 V Very low switching and conduction losses3. Applications Compac

PHE13005Silicon diffused power transistor21 January 2014 Product data sheet1. General descriptionHigh voltage, high speed NPN planar-passivated power switching transistor in a SOT78plastic package intended for use in high frequency electronic lighting ballast applications2. Features and benefits Fast switching High voltage capability of 700 V Low thermal resistance3

DISCRETE SEMICONDUCTORSDATA SHEETPHE13007Silicon Diffused Power TransistorProduct specification February 2018WeEn Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTIONThe PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in highfrequency electronic lighting ballast applications, converte

PHE13005XSilicon diffused power transistorRev.03 - 26 April 2018 Product data sheet1. General descriptionHigh-voltage, high-speed planar-passivated, NPN power switching transistor in SOT186A (TO-220F) plastic package for use in high frequency electronic lighting ballast applications2. Features and benefits Fast switching High voltage capability of 700 V Low thermal re