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PHE13009 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PHE13009
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 80 W
   Tensión colector-base (Vcb): 700 V
   Tensión colector-emisor (Vce): 400 V
   Corriente del colector DC máxima (Ic): 12 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 8
   Paquete / Cubierta: TO220AB
 

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PHE13009 Datasheet (PDF)

 ..1. Size:47K  philips
phe13009.pdf pdf_icon

PHE13009

Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTIONThe PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in highfrequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITI

 ..2. Size:276K  cn ween semi
phe13009.pdf pdf_icon

PHE13009

WeEn Semiconductors Product data sheet Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTIONThe PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in highfrequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. M

 7.1. Size:148K  philips
phe13003a.pdf pdf_icon

PHE13009

PHE13003ANPN power transistorRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package.1.2 Features and benefits Fast switching High voltage capability of 700 V1.3 Applications Compact fluorescent lamps (CFL) Inverters Electronic

 7.2. Size:50K  philips
phe13003au 1.pdf pdf_icon

PHE13009

Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13003AU GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended foruse in high frequency electronic lighting ballast applications, converters and inverters, etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Col

Otros transistores... PEMZ7 , PHD13003C , PHD13005 , PHE13003A , PHE13003C , PHE13005 , PHE13005X , PHE13007 , TIP31C , PIMD2 , PIMD3 , PIMH9 , PIMN31 , PIMT1 , PMBS3904 , PMBS3906 , PMBT2222 .

 

 
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