PHE13009 Datasheet. Specs and Replacement

Type Designator: PHE13009  πŸ“„πŸ“„ 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 Β°C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO220AB

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PHE13009 datasheet

 ..1. Size:47K  philips

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PHE13009

Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITI... See More ⇒

 ..2. Size:276K  cn ween semi

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PHE13009

WeEn Semiconductors Product data sheet Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. M... See More ⇒

 7.1. Size:148K  philips

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PHE13009

PHE13003A NPN power transistor Rev. 02 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package. 1.2 Features and benefits Fast switching High voltage capability of 700 V 1.3 Applications Compact fluorescent lamps (CFL) Inverters Electronic... See More ⇒

 7.2. Size:50K  philips

phe13003au 1.pdf pdf_icon

PHE13009

Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13003AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Col... See More ⇒

Detailed specifications: PEMZ7, PHD13003C, PHD13005, PHE13003A, PHE13003C, PHE13005, PHE13005X, PHE13007, A733, PIMD2, PIMD3, PIMH9, PIMN31, PIMT1, PMBS3904, PMBS3906, PMBT2222

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