PUMD17 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PUMD17
Código: D9*
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 47 kOhm
Resistencia Base-Emisor R2 = 22 kOhm
Ratio típica de resistencia R1/R2 = 2.1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: SOT363
Búsqueda de reemplazo de transistor bipolar PUMD17
PUMD17 Datasheet (PDF)
pemd17 pumd17.pdf
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pemd10 pumd10.pdf
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pemd16 pumd16.pdf
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pumd10 2.pdf
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pumd12 1.pdf
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pemd19 pumd19.pdf
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pemd12 pumd12.pdf
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pemd18 pumd18.pdf
PEMD18; PUMD18NPN/PNP resistor-equipped transistors;R1 = 4.7 k, R2 = 10 kRev. 2 21 December 2011 Product data sheet1. Product profile1.1 General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number Package PNP/PNP NPN/NPN Package complement complement configurationNXP J
pemd14 pumd14.pdf
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pemd13 pumd13.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPEMD13; PUMD13NPN/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 kProduct data sheet 2003 Oct 08Supersedes data of 2001 Feb 27NXP Semiconductors Product data sheetNPN/PNP resistor-equipped transistors; PEMD13; PUMD13R1 = 4.7 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX.
pemd15 pumd15.pdf
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Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: EMX1DXV6T1G
History: EMX1DXV6T1G
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