2N5675 Todos los transistores

 ..1. Size:11K  semelab
 2n5675.pdf

2N5675 Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 100V dia. IC = 2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

 9.1. Size:72K  njs
 2n5670.pdf

 9.2. Size:123K  central
 2n5679 2n5680 2n5681 2n5682.pdf

DATA SHEET 2N5679 2N5680 PNP 2N5681 2N5682 NPN COMPLEMENTARY SILICON HIGH POWER TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5679 Series types are complementary silicon high power transistors manufactured by the epitaxial planar process and designed for general-purpose amplifier and switching applications where high voltages are required. MAXIMUM RATIN

 9.3. Size:317K  comset
 2n5671-2n5672.pdf

NPN 2N5671 2N5672 HIGH CURRENT FAST SWITCHING APPLICATIONS HIGH CURRENT FAST SWITCHING APPLICATIONS The 2N5671 and 2N5672 are silicon multiepitaxial planer NPN transistors in Jedec TO-3. They are especially intended for high current, fast switching industrial applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N5671 90 VCEO Collector-Emitter Voltage V 2N5672 120 2N56

 9.4. Size:125K  mospec
 2n5671-72.pdf

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 9.5. Size:43K  bocasemi
 2n5679 2n5680 2n5681 2n5682.pdf

IS/ISO 9002 IS / IECQC 700000 Lic# QSC/L- 000019.2 IS / IECQC 750100 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5681 2N5680 2N5682 PNP NPN TO-39 TO-39 Boca Semiconductor Corp. BSC These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL 2N5

 9.6. Size:187K  cdil
 2n5679 2n5680 81 82.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5681 2N5680 2N5682 PNP NPN TO-39 TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL 2N5679 2N5680 UNITS 2N5681 2N5682 Collector -Emitter Voltage VCEO 100 120 V Collector -Base

 9.7. Size:164K  aeroflex
 2n5679 2n5680.pdf

PNP Power Silicon Transistor 2N5679 & 2N5680 Features Available in JAN, JANTX and JANTXV per MIL-PRF-19500/582 TO-39 (TO-205AD) Package Maximum Ratings (TA = 25 C unless otherwise noted) Ratings Symbol 2N5679 2N5680 Units Collector - Emitter Voltage VCEO 100 120 Vdc Collector - Base Voltage VCBO 100 120 Vdc Emitter - Base Voltage VEBO 4.0 4.0 Vdc Collector Current IC 1.0 1.0

 9.8. Size:165K  cn sptech
 2n5672.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistors 2N5672 DESCRIPTION DC Current Gain- h = 20 100@I = 15A FE C Low Collector Saturation Voltage- V )= 0.75V(Max)@ I = 15A CE(sat C Wide Area of Safe Operation APPLICATIONS Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 9.9. Size:119K  inchange semiconductor
 2n5671 2n5672.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5671 2N5672 DESCRIPTION With TO-3 package High current ,high speed APPLICATIONS Intended for high current and fast switching industrial applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PA

 9.10. Size:123K  inchange semiconductor
 2n5676.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5676 DESCRIPTION With TO-66 package High transition frequency APPLICATIONS For use as high-frequency drivers in audio amplifiers PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS V