2N5675 Datasheet and Replacement

2N5675Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 100V dia.IC = 2A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

DATA SHEET2N5679 2N5680 PNP 2N5681 2N5682 NPN COMPLEMENTARY SILICON HIGH POWER TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5679 Series types are complementary silicon high power transistors manufactured by the epitaxial planar process and designed for general-purpose amplifier and switching applications where high voltages are required. MAXIMUM RATIN

NPN 2N5671 2N5672HIGH CURRENT FAST SWITCHING APPLICATIONSHIGH CURRENT FAST SWITCHING APPLICATIONSThe 2N5671 and 2N5672 are silicon multiepitaxial planer NPN transistors in Jedec TO-3.They are especially intended for high current, fast switching industrial applications.ABSOLUTE MAXIMUM RATINGSSymbol Ratings Value Unit2N5671 90VCEO Collector-Emitter Voltage V2N5672 1202N56

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IS/ISO 9002 IS / IECQC 700000Lic# QSC/L- 000019.2 IS / IECQC 750100Continental Device India LimitedAn IS/ISO 9002 and IECQ Certified ManufacturerPNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5681 2N5680 2N5682 PNP NPNTO-39 TO-39Boca Semiconductor Corp. BSCThese Are High Voltage & High Current, General Purpose TransistorsABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL 2N5

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5681 2N5680 2N5682 PNP NPNTO-39 TO-39These Are High Voltage & High Current, General Purpose TransistorsABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL 2N5679 2N5680 UNITS2N5681 2N5682Collector -Emitter Voltage VCEO 100 120 VCollector -Base

PNP Power Silicon Transistor2N5679 & 2N5680Features Available in JAN, JANTX and JANTXVper MIL-PRF-19500/582 TO-39 (TO-205AD) PackageMaximum Ratings (TA = 25C unless otherwise noted)Ratings Symbol 2N5679 2N5680 UnitsCollector - Emitter Voltage VCEO 100 120 VdcCollector - Base Voltage VCBO 100 120 VdcEmitter - Base Voltage VEBO 4.0 4.0 VdcCollector Current IC 1.0 1.0

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors 2N5672DESCRIPTIONDC Current Gain-: h = 20~100@I = 15AFE CLow Collector Saturation Voltage-: V )= 0.75V(Max)@ I = 15ACE(sat CWide Area of Safe OperationAPPLICATIONSDesigned for general purpose power amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5671 2N5672 DESCRIPTION With TO-3 package High current ,high speed APPLICATIONS Intended for high current and fast switching industrial applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PA

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5676 DESCRIPTION With TO-66 package High transition frequency APPLICATIONS For use as high-frequency drivers in audio amplifiers PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS V