2STW1695 Todos los transistores

2STW1695 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -140 V Complementary to 2STW4468 Typical ft = 20 MHz Fully characterized at 125 oC Applications 3 2 Audio power amplifier 1 TO-247 Description The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear Figure 1. Internal schema

2STW1693 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -80 V Complementary to 2STW4466 Typical ft = 20 MHz Fully characterized at 125 oC Applications 3 2 Audio power amplifier 1 TO-247 Description The device is a PNP transistor manufactured in Figure 1. Internal schematic diagram low voltage planar technology using

2STW100 2STW200 Complementary power Darlington transistors Preliminary data Features Complementary NPN - PNP transistors Monolithic Darlington configuration Applications Audio power amplifier DC-AC converter 3 2 1 Low voltage DC motor drive General purpose switching applications TO-247 Description Figure 1. Internal schematic diagrams The devices are man

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2STW100 DESCRIPTION With TO-3PN packaging Very high DC current gain Monolithic darlington transistor with integrated antiparallel collector-emitter diode Complement to Type 2STW200 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC-DC motor control Electro