2STW1695 Datasheet and Replacement

2STW1695High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -140 V Complementary to 2STW4468 Typical ft = 20 MHz Fully characterized at 125 oCApplications32 Audio power amplifier1TO-247DescriptionThe device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear Figure 1. Internal schema

2STW1693High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -80 V Complementary to 2STW4466 Typical ft = 20 MHz Fully characterized at 125 oCApplications32 Audio power amplifier1TO-247DescriptionThe device is a PNP transistor manufactured in Figure 1. Internal schematic diagramlow voltage planar technology using

2STW1002STW200Complementary power Darlington transistorsPreliminary dataFeatures Complementary NPN - PNP transistors Monolithic Darlington configurationApplications Audio power amplifier DC-AC converter 321 Low voltage DC motor drive General purpose switching applicationsTO-247DescriptionFigure 1. Internal schematic diagramsThe devices are man

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2STW100DESCRIPTIONWith TO-3PN packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to Type 2STW200Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectro