BUL128FP Todos los transistores

 ..1. Size:242K  st
 bul128fp.pdf

BUL128FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 3 2 APPLICATIONS 1 ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING TO-220FP DESCRIPTION The device is manufactured using

 8.1. Size:224K  st
 bul128d-b.pdf

BUL128D-B HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n STMicroelectronics PREFERRED SALES Figure 1 Package TYPE n NPN TRANSISTOR n HIGH VOLTAGE CAPABILITY n LOW SPREAD OF DYNAMIC PARAMETERS n MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION n VERY HIGH SWITCHING SPEED n INTEGRATED ANTIPARALLEL 3 COLLECTOR- EMITTER DIODE 2 1 TO-220 APPLICATIONS n ELECTRONIC BALLAST FO

 8.2. Size:72K  st
 bul128d.pdf

BUL128D-B HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 3 INTEGRATED ANTIPARALLEL 2 COLLECTOR-EMITTER DIODE 1 APPLICATIONS TO-220 ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING

 8.3. Size:235K  st
 bul128.pdf

BUL128 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 3 2 APPLICATIONS 1 ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING TO-220 DESCRIPTION The device is manufactured using high

 8.4. Size:231K  lge
 bul128d.pdf

BUL128D(NPN) TO-220 Transistor TO-220 1.BASE 2.COLLECTOR 3.EMITTER 3 2 1 Features ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Vol

 8.5. Size:199K  foshan
 bul128dr8.pdf

BUL128DR8 NPN /SILICON NPN TRANSISTOR Purpose Electronic ballasts for fluorescent lighting,flyback and forward single transistor low power converters. N Features NPN transistor,high voltage capability,low

 8.6. Size:201K  foshan
 bul128dr7.pdf

BUL128DR7 NPN /SILICON NPN TRANSISTOR Purpose Electronic ballasts for fluorescent lighting,flyback and forward single transistor low power converters. N Features NPN transistor,high voltage capability,low

 8.7. Size:165K  sunroc
 bul128d.pdf

SUNROC BUL128D TRANSISTOR (NPN) TO-220 FEATURES ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER 1.BASE CONVERTERS 2.COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.EMITTER Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage

 8.8. Size:61K  inchange semiconductor
 bul128d.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL128D DESCRIPTION With TO-220C package High voltage ,high speed Integrated antiparallel collector-emitter diode APPLICATIONS Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base

 8.9. Size:212K  inchange semiconductor
 bul128.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor BUL128 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 0.7V(Max) @ I = 0.5A CE(sat) C Very High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in lighting applications