Справочник транзисторов. BUL128FP

 

Биполярный транзистор BUL128FP - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BUL128FP
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 31 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
   Макcимальный постоянный ток коллектора (Ic): 4 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 15
   Корпус транзистора: TO220FP

 Аналоги (замена) для BUL128FP

 

 

BUL128FP Datasheet (PDF)

 ..1. Size:242K  st
bul128fp.pdf

BUL128FP
BUL128FP

BUL128FPHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED32APPLICATIONS: 1 ELECTRONIC BALLASTS FORFLUORESCENT LIGHTINGTO-220FPDESCRIPTION The device is manufactured using

 8.1. Size:224K  st
bul128d-b.pdf

BUL128FP
BUL128FP

BUL128D-BHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORn STMicroelectronics PREFERRED SALES Figure 1: PackageTYPEn NPN TRANSISTORn HIGH VOLTAGE CAPABILITYn LOW SPREAD OF DYNAMIC PARAMETERSn MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATIONn VERY HIGH SWITCHING SPEEDn INTEGRATED ANTIPARALLEL 3COLLECTOR- EMITTER DIODE21 TO-220APPLICATIONSn ELECTRONIC BALLAST FO

 8.2. Size:72K  st
bul128d.pdf

BUL128FP
BUL128FP

BUL128D-B HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED3 INTEGRATED ANTIPARALLEL2COLLECTOR-EMITTER DIODE1APPLICATIONS:TO-220 ELECTRONIC BALLASTS FORFLUORESCENT LIGHTING

 8.3. Size:235K  st
bul128.pdf

BUL128FP
BUL128FP

BUL128HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED32APPLICATIONS: 1 ELECTRONIC BALLASTS FORFLUORESCENT LIGHTINGTO-220DESCRIPTION The device is manufactured using high

 8.4. Size:231K  lge
bul128d.pdf

BUL128FP
BUL128FP

BUL128D(NPN) TO-220 TransistorTO-2201.BASE 2.COLLECTOR 3.EMITTER 3 21Features ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Vol

 8.5. Size:199K  foshan
bul128dr8.pdf

BUL128FP
BUL128FP

BUL128DR8 NPN /SILICON NPN TRANSISTOR : Purpose: Electronic ballasts for fluorescent lighting,flyback and forward single transistor low power converters. :N Features: NPN transistor,high voltage capability,low

 8.6. Size:201K  foshan
bul128dr7.pdf

BUL128FP
BUL128FP

BUL128DR7 NPN /SILICON NPN TRANSISTOR : Purpose: Electronic ballasts for fluorescent lighting,flyback and forward single transistor low power converters. :N Features: NPN transistor,high voltage capability,low

 8.7. Size:165K  sunroc
bul128d.pdf

BUL128FP

SUNROC BUL128D TRANSISTOR (NPN) TO-220 FEATURES ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER 1.BASE CONVERTERS 2.COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.EMITTER Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage

 8.8. Size:61K  inchange semiconductor
bul128d.pdf

BUL128FP
BUL128FP

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL128D DESCRIPTION With TO-220C package High voltage ,high speed Integrated antiparallel collector-emitter diode APPLICATIONS Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base

 8.9. Size:212K  inchange semiconductor
bul128.pdf

BUL128FP
BUL128FP

INCHANGE Semiconductorisc Silicon NPN Power Transistor BUL128DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 0.7V(Max) @ I = 0.5ACE(sat) CVery High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in lighting applications

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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