BUL312FP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BUL312FPHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC LARGE RBSOA FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING321APPLICATIONS HORIZONTAL DEFLECTION FOR TVTO-220FP SMPS ELECTRO

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL312FP DESCRIPTIONCollectorEmitter Sustaining Voltage : VCEO(SUS) = 500V(Min.) Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1A Very High Switching Speed APPLICATIONSDesigned for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMU

BUL312FHHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOROrdering Code Marking ShipmentBUL312FH BUL312FH Tube HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125 C LARGE R.B.S.O.A.TO-220FH FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTINGAPPLICATIONS:

isc Silicon NPN Power Transistor BUL312DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 500V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 0.5V(Max) @ I = 1ACE(sat) CHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in lighting applications and lo

BUL310FPHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC LARGE RBSOA32 FULLY MOLDED ISOLATED PACKAGE1 2000 V DC ISOLATION (U.L. COMPLIANT)TO-220FPAPPLICATI

BUL310HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC32 LARGE RBSOA1APPLICATIONS TO-220 ELECTRONIC BALLASTS FORFLUORESCENT LIGHTING F

isc Silicon NPN Power Transistor BUL310XIDESCRIPTIONCollectorEmitter Sustaining Voltage: V = 500V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 0.5V(Max) @ I = 1ACE(sat) C High Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in lighting applications and

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL310FP DESCRIPTION With TO-220F package High voltage,high speed Wide area of safe operation APPLICATIONS Electronic ballasts for fluorescent lighting Switch mode power supplies Flyback and forward single transistor low power converters PINNING PIN DESCRIPTION1 Base Collector;c

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL310 DESCRIPTION With TO-220C package High voltage,high speed Wide area of safe operation APPLICATIONS Electronic ballasts for fluorescent lighting Switch mode power supplies Flyback and forward single transistor low power converters PINNING PIN DESCRIPTION1 Base Collector;con