BUL742C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUL742C
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 70 W
   Tensión colector-base (Vcb): 1050 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 15 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta: TO220 TO220FP

Búsqueda de reemplazo de transistor bipolar BUL742C

BUL742C Datasheet (PDF)

..1. Size:281K st
bul742c.pdf

BUL742CHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOROrdering Code Marking Package / ShipmentBUL742C BUL742C TO-220 / Tube HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED32APPLICATIONS:1 ELECTRONIC BALLAST FOR FLUORESCENTTO-220LIGHTING SWITCH MODE POWER SUPPLIESDESCRIPTIONTh

..2. Size:284K st
bul742c bulb742c.pdf

BUL742CBULB742CHigh voltage fast-switchingNPN power transistorFeatures Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed332 211ApplicationsTO-220I2PAK Electronic ballast for fluorescent lighting Switch mode power suppliesDescriptionThe device is manufacture

..3. Size:281K inchange semiconductor
bul742c.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL742C DESCRIPTIONCollectorEmitter Breakdown Voltage : V(BR)CEO = 400V(Min.) Collector Saturation Voltage : VCE(sat) = 0.2V(Max) @ IC= 0.8A APPLICATIONSDesigned for electronic lamp ballast circuits switch-mode power supplies applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL P

8.1. Size:150K foshan
bul742.pdf

BUL742 NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V CBO V 400 V CEO V 12 V EBO I 4 A C I 2 ABP (Ta=25) 2 WCP (

8.2. Size:59K inchange semiconductor
bul742.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL742 DESCRIPTION With TO-220C package High voltage capability Very high switching speed APPLICATIONS Electronic ballast for fluorescent lighting Switch mode power supplies PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratin

9.1. Size:330K st
bul741-fp.pdf

BUL741BUL741FPHigh voltage fast-switching NPN power transistorsFeatures High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed332211ApplicationsTO-220 TO-220FP Electronic ballast for fluorescent lighting Switch mode power supplies.DescriptionFigure 1. Internal sch

9.2. Size:216K st
bul743.pdf

BUL743High voltage fast-switchingNPN power transistorFeatures Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed321Applications Electronic ballast for fluorescent lighting up to TO-220256 W (8 x 32 W) Switch mode power suppliesFigure 1. Internal schematic diagramDes

9.3. Size:332K st
bul741 bul741fp.pdf