Справочник транзисторов. BUL742C

 

Биполярный транзистор BUL742C - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BUL742C
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 70 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 1050 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 15 V
   Макcимальный постоянный ток коллектора (Ic): 4 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 25
   Корпус транзистора: TO220 TO220FP

 Аналоги (замена) для BUL742C

 

 

BUL742C Datasheet (PDF)

 ..1. Size:281K  st
bul742c.pdf

BUL742C
BUL742C

BUL742CHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOROrdering Code Marking Package / ShipmentBUL742C BUL742C TO-220 / Tube HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED32APPLICATIONS:1 ELECTRONIC BALLAST FOR FLUORESCENTTO-220LIGHTING SWITCH MODE POWER SUPPLIESDESCRIPTIONTh

 ..2. Size:284K  st
bul742c bulb742c.pdf

BUL742C
BUL742C

BUL742CBULB742CHigh voltage fast-switchingNPN power transistorFeatures Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed332 211ApplicationsTO-220I2PAK Electronic ballast for fluorescent lighting Switch mode power suppliesDescriptionThe device is manufacture

 ..3. Size:281K  inchange semiconductor
bul742c.pdf

BUL742C
BUL742C

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL742C DESCRIPTIONCollectorEmitter Breakdown Voltage : V(BR)CEO = 400V(Min.) Collector Saturation Voltage : VCE(sat) = 0.2V(Max) @ IC= 0.8A APPLICATIONSDesigned for electronic lamp ballast circuits switch-mode power supplies applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL P

 8.1. Size:150K  foshan
bul742.pdf

BUL742C
BUL742C

BUL742 NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V CBO V 400 V CEO V 12 V EBO I 4 A C I 2 ABP (Ta=25) 2 WCP (

 8.2. Size:59K  inchange semiconductor
bul742.pdf

BUL742C
BUL742C

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL742 DESCRIPTION With TO-220C package High voltage capability Very high switching speed APPLICATIONS Electronic ballast for fluorescent lighting Switch mode power supplies PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratin

 9.1. Size:330K  st
bul741-fp.pdf

BUL742C
BUL742C

BUL741BUL741FPHigh voltage fast-switching NPN power transistorsFeatures High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed332211ApplicationsTO-220 TO-220FP Electronic ballast for fluorescent lighting Switch mode power supplies.DescriptionFigure 1. Internal sch

 9.2. Size:216K  st
bul743.pdf

BUL742C
BUL742C

BUL743High voltage fast-switchingNPN power transistorFeatures Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed321Applications Electronic ballast for fluorescent lighting up to TO-220256 W (8 x 32 W) Switch mode power suppliesFigure 1. Internal schematic diagramDes

 9.3. Size:332K  st
bul741 bul741fp.pdf

BUL742C
BUL742C

BUL741BUL741FPHigh voltage fast-switching NPN power transistorsFeatures High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed332211ApplicationsTO-220 TO-220FP Electronic ballast for fluorescent lighting Switch mode power supplies.DescriptionFigure 1. Internal sch

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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