BULD118D Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BULD118D

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 8

Encapsulados: IPAK

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BULD118D datasheet

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 buld118d-1.pdf pdf_icon

BULD118D

BULD118D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 3 2 1 APPLICATIONS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING FLYBACK AND FORWARD SINGLE IPAK TRANSISTOR LOW POWER CONVERT

 8.1. Size:289K  st
 buld1101e.pdf pdf_icon

BULD118D

BULD1101E High voltage fast-switching NPN Power Transistor General features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 3 3 In compliance with the 2002/93/EC European 2 Directive 1 1 DPAK IPAK Description TO-252 TO-251 The device is manufactured using high voltage Multi

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 buld128d1.pdf pdf_icon

BULD118D

BULD128D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE ORDER CODES BULD128DA-1 AND BULD128DB-1 NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR 3 RELIABLE OPERATION 2 1 VERY HIGH SWITCHING SPEED INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE IPAK APPLICATIONS (TO-251) ELECT

Otros transistores... BUL89, BUL903ED, BUL903EDFP, BULB128, BULB39D, BULB49D, BULB7216, BULB742C, 2N2222A, BULD39D-1, BULD741, BULD742C, BULK128DB, BUT30V, BUT70W, BUTW92, BUXD87