BULD118D Specs and Replacement
Type Designator: BULD118D
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 8
Package: IPAK
BULD118D Substitution
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BULD118D datasheet
BULD118D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 3 2 1 APPLICATIONS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING FLYBACK AND FORWARD SINGLE IPAK TRANSISTOR LOW POWER CONVERT... See More ⇒
BULD1101E High voltage fast-switching NPN Power Transistor General features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 3 3 In compliance with the 2002/93/EC European 2 Directive 1 1 DPAK IPAK Description TO-252 TO-251 The device is manufactured using high voltage Multi... See More ⇒
BULD128D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE ORDER CODES BULD128DA-1 AND BULD128DB-1 NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR 3 RELIABLE OPERATION 2 1 VERY HIGH SWITCHING SPEED INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE IPAK APPLICATIONS (TO-251) ELECT... See More ⇒
Detailed specifications: BUL89, BUL903ED, BUL903EDFP, BULB128, BULB39D, BULB49D, BULB7216, BULB742C, 2N2222A, BULD39D-1, BULD741, BULD742C, BULK128DB, BUT30V, BUT70W, BUTW92, BUXD87
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