BULD39D-1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BULD39D-1
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 35 W
Tensión colector-base (Vcb): 850 V
Tensión colector-emisor (Vce): 450 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 4
Encapsulados: IPAK
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BULD39D-1 datasheet
buld39dt4 buld39d-1.pdf
BULD39D-1 BULD39DT4 High Voltage Fast-Switching NPN Power Transistor General features NPN transistor High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed 3 3 2 1 High ruggedness 1 Surface-mounting DPAK (TO-252) power IPAK DPAK package in tape & reel (suffix T4 ) TO-251 TO-252 Through-hole IPAK (
buld3n7t4.pdf
BULD3N7T4 Medium voltage fast-switching NPN Power Transistor General features Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 3 In compliance with the 2002/93/EC European Directive 1 DPAK Description The device is manufactured using high voltage Multi-Epitaxial Planar technol
buld3p5t4.pdf
BULD3P5T4 Medium voltage fast-switching PNP Power Transistor General features Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 3 In compliance with the 2002/93/EC European Directive 1 DPAK Description The device is manufactured using high voltage Multi-Epitaxial Planar technol
Otros transistores... BUL903ED , BUL903EDFP , BULB128 , BULB39D , BULB49D , BULB7216 , BULB742C , BULD118D , 2SD718 , BULD741 , BULD742C , BULK128DB , BUT30V , BUT70W , BUTW92 , BUXD87 , D44H11FP .
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