All Transistors. BULD39D-1 Datasheet

 

BULD39D-1 Datasheet and Replacement


   Type Designator: BULD39D-1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 35 W
   Maximum Collector-Base Voltage |Vcb|: 850 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 4
   Noise Figure, dB: -
   Package: IPAK
 

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BULD39D-1 Datasheet (PDF)

 ..1. Size:276K  st
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BULD39D-1

www.DataSheet4U.comBULD39D-1BULD39DT4High Voltage Fast-SwitchingNPN Power TransistorGeneral features NPN transistor High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed3321 High ruggedness1 Surface-mounting DPAK (TO-252) power IPAK DPAKpackage in tape & reel (suffix T4) TO-251 TO-252

 ..2. Size:246K  st
buld39dt4 buld39d-1.pdf pdf_icon

BULD39D-1

BULD39D-1BULD39DT4High Voltage Fast-SwitchingNPN Power TransistorGeneral features NPN transistor High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed3321 High ruggedness1 Surface-mounting DPAK (TO-252) power IPAK DPAKpackage in tape & reel (suffix T4) TO-251 TO-252 Through-hole IPAK (

 9.1. Size:241K  st
buld3n7t4.pdf pdf_icon

BULD39D-1

BULD3N7T4Medium voltage fast-switching NPN Power TransistorGeneral features Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed3 In compliance with the 2002/93/EC European Directive1DPAKDescriptionThe device is manufactured using high voltageMulti-Epitaxial Planar technol

 9.2. Size:250K  st
buld3p5t4.pdf pdf_icon

BULD39D-1

BULD3P5T4Medium voltage fast-switching PNP Power TransistorGeneral features Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed3 In compliance with the 2002/93/EC European Directive1DPAKDescriptionThe device is manufactured using high voltageMulti-Epitaxial Planar technol

Datasheet: BUL903ED , BUL903EDFP , BULB128 , BULB39D , BULB49D , BULB7216 , BULB742C , BULD118D , 2SC2073 , BULD741 , BULD742C , BULK128DB , BUT30V , BUT70W , BUTW92 , BUXD87 , D44H11FP .

History: KRC411V | 2N961-46 | 2N4926S | BC857ALT1 | LBC856BDW1T1G | LH8050QLT1G | AC188-01

Keywords - BULD39D-1 transistor datasheet

 BULD39D-1 cross reference
 BULD39D-1 equivalent finder
 BULD39D-1 lookup
 BULD39D-1 substitution
 BULD39D-1 replacement

 

 
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