All Transistors. BULD39D-1 Datasheet

 

BULD39D-1 Datasheet and Replacement


   Type Designator: BULD39D-1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 35 W
   Maximum Collector-Base Voltage |Vcb|: 850 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 4
   Noise Figure, dB: -
   Package: IPAK
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BULD39D-1 Datasheet (PDF)

 ..1. Size:276K  st
buld39d-1.pdf pdf_icon

BULD39D-1

www.DataSheet4U.comBULD39D-1BULD39DT4High Voltage Fast-SwitchingNPN Power TransistorGeneral features NPN transistor High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed3321 High ruggedness1 Surface-mounting DPAK (TO-252) power IPAK DPAKpackage in tape & reel (suffix T4) TO-251 TO-252

 ..2. Size:246K  st
buld39dt4 buld39d-1.pdf pdf_icon

BULD39D-1

BULD39D-1BULD39DT4High Voltage Fast-SwitchingNPN Power TransistorGeneral features NPN transistor High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed3321 High ruggedness1 Surface-mounting DPAK (TO-252) power IPAK DPAKpackage in tape & reel (suffix T4) TO-251 TO-252 Through-hole IPAK (

 9.1. Size:241K  st
buld3n7t4.pdf pdf_icon

BULD39D-1

BULD3N7T4Medium voltage fast-switching NPN Power TransistorGeneral features Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed3 In compliance with the 2002/93/EC European Directive1DPAKDescriptionThe device is manufactured using high voltageMulti-Epitaxial Planar technol

 9.2. Size:250K  st
buld3p5t4.pdf pdf_icon

BULD39D-1

BULD3P5T4Medium voltage fast-switching PNP Power TransistorGeneral features Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed3 In compliance with the 2002/93/EC European Directive1DPAKDescriptionThe device is manufactured using high voltageMulti-Epitaxial Planar technol

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: MP282 | 2SC812 | 2SC3587 | 2SC5227A | 2PA1774M | BDX10H | ECG386

Keywords - BULD39D-1 transistor datasheet

 BULD39D-1 cross reference
 BULD39D-1 equivalent finder
 BULD39D-1 lookup
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 BULD39D-1 replacement

 

 
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