BULK128DB Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BULK128DB

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 55 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 8

Encapsulados: SOT82

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BULK128DB datasheet

 6.1. Size:83K  st
 bulk128d.pdf pdf_icon

BULK128DB

BULK128D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE ORDERING CODES BULK128D-A AND BULK128D-B NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 3 2 1 APPLICATIONS ELECTRONIC BALLASTS FOR SOT-82 FLUORESCENT LIGHTING FLYBACK AND FORWA

 6.2. Size:142K  st
 bulk128d-b.pdf pdf_icon

BULK128DB

BULK128D-B HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION 3 2 VERY HIGH SWITCHING SPEED 1 APPLICATIONS SOT-82 ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTI

 7.1. Size:223K  st
 bulk128.pdf pdf_icon

BULK128DB

BULK128 High voltage fast-switching NPN power transistor Features High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications 3 2 1 Electronic ballast for fluorescent lighting SOT-82 Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium

Otros transistores... BULB39D, BULB49D, BULB7216, BULB742C, BULD118D, BULD39D-1, BULD741, BULD742C, 2SC2073, BUT30V, BUT70W, BUTW92, BUXD87, D44H11FP, D45H11FP, HD1530FX, HD1530JL