BULK128DB Datasheet, Equivalent, Cross Reference Search
Type Designator: BULK128DB
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 55 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: SOT82
BULK128DB Transistor Equivalent Substitute - Cross-Reference Search
BULK128DB Datasheet (PDF)
bulk128d.pdf
BULK128DHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE ORDERING CODES : BULK128D-A ANDBULK128D-B NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED321APPLICATIONS: ELECTRONIC BALLASTS FORSOT-82FLUORESCENT LIGHTING FLYBACK AND FORWA
bulk128d-b.pdf
BULK128D-BHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION32 VERY HIGH SWITCHING SPEED1APPLICATIONS: SOT-82 ELECTRONIC BALLASTS FORFLUORESCENT LIGHTI
bulk128.pdf
BULK128High voltage fast-switchingNPN power transistorFeatures High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speedApplications321 Electronic ballast for fluorescent lightingSOT-82DescriptionThe device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
