ST13005N Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ST13005N 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60 W
Tensión colector-base (Vcb): 700 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 10
Encapsulados: TO220
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ST13005N datasheet
..1. Size:283K st
st13005n.pdf 
ST13005N HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR MEDIUM VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS COMPACT FLUORESCENT LAMP (CFL) 3 2 ELECTRONIC BALLASTS FOR 1 FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES TO-220 DESCRIPTION The device is
7.1. Size:236K st
st13005.pdf
ST13005 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications 3 2 1 Electronic ballast for fluorescent lighting Switch mode power supplies TO-220 Description The device is manufactured using high voltage multi-epitaxial planar technology
7.2. Size:633K semtech
st13005.pdf
ST 13005 NPN Silicon Power Transistors for high-voltage, high-speed power switching applications. TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 700 V Collector Base Voltage VCBO 400 V Collector Emitter Voltage VCEO Emitter Base Voltage VEBO 9 V Collector Current IC 4 A O Power Dissipation (Ta = 25 C) Ptot 2 W O Power Dissipati
8.1. Size:141K st
st13003d-k.pdf
ST13003D-K High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Integrated antiparallel collector-emitter diode 1 2 3 Applications SOT-32 Electronic ballast for fluorescent lighting Description Figure 1. Internal schemati
8.2. Size:214K st
st13007d.pdf
ST13007D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR IMPROVED SPECIFICATION - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR 3 2 RELIABLE OPERATION 1 VERY HIGH SWITCHING SPEED FULLY CHARACT
8.3. Size:80K st
st13003.pdf
ST13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING 1 2 SWITCH MODE POWER SUPPLIES 3 DESCRIPTION SOT-32 The device is manufactured using high voltage Multi Epitaxial Planar te
8.4. Size:218K st
st13003-k.pdf
ST13003-K High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Very high switching speed Applications 1 2 Electronic ballast for fluorescent lighting (CFL) 3 SMPS for battery charger SOT-32 Description The device is manufactured using high voltage Figure 1. Internal schematic diagram multi-epitaxi
8.5. Size:160K st
st13007dfp.pdf
ST13007DFP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR IMPROVED SPECIFICATION - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR 3 2 RELIABLE OPERATION 1 VERY HIGH SWITCHING SPEED FULLY CHARA
8.6. Size:68K st
st13007-.pdf
ST13007FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED o FULLY CHARACTERIZED AT 125 C LARGE RBSOA 3 2 APPLICATIONS 1 ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING TO-220FP SWITCH MODE POWER SUPPLIES DESCRIPTION
8.7. Size:252K st
st13007.pdf
ST13007 High voltage fast-switching NPN power transistor Features DC current gain classification TAB High voltage capability Low spread of dynamic parameters Very high switching speed Applications 3 2 1 Electronic ballast for fluorescent lighting TO-220 Switch mode power supplies Description Figure 1. Internal schematic diagram The device is manufactured
8.8. Size:163K st
st13003dn.pdf
ST13003DN High voltage fast-switching NPN power transistor Preliminary data Features High voltage capability Low spread of dynamic parameters Very high switching speed Integrated free-wheeling diode 3 Application 2 1 Compact fluorescent lamps (CFLs) SOT-32 Description The device is manufactured using high voltage multi epitaxial planar technology for high swi
8.9. Size:203K st
st13003n.pdf
ST13003N High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Very high switching speed Application 3 2 Compact fluorescent lamps (CFLs) 1 SOT-32 Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a
8.10. Size:175K st
st13009.pdf
ST13009 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed 3 Applications 2 1 Switch mode power supplies TO-220 Description The device is manufactured using high voltage multi-epitaxial planar technology for high Figure
8.11. Size:241K st
st13003 st13003-k.pdf
ST13003, ST13003-K High voltage fast-switching NPN power transistor Datasheet - production data Features High voltage capability Low spread of dynamic parameters Very high switching speed Applications 3 2 Electronic ballast for fluorescent lighting (CFL) 1 SMPS for battery charger SOT-32 Description Figure 1. Internal schematic diagram The device is manufact
8.12. Size:160K semtech
st13003.pdf
ST 13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. The transistor is subdivided into one group according to its DC current gain. TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 600 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 9 V Co
8.13. Size:615K semtech
st13003h.pdf
ST 13003H NPN Silicon Epitaxial Planar Transistor for high voltage and high speed switching applications 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Emitter Voltage VCES 900 V Collector Emitter Voltage VCEO 500 V Emitter Base Voltage VEBO 9 V Collector Current (f 100 Hz, Duty cycle 50 %)
8.14. Size:644K semtech
st13002t st13003t.pdf
ST 13002T / 13003T NPN Silicon Power Transistors E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Emitter Voltage 13002T 300 VCEO(sus) V 13003T 400 Collector Emitter Voltage 13002T 600 VCEV V 13003T 700 Emitter Base Voltage VEBO 9 V Collector Current IC 1.5 A Peak Collector Current at t = 5 ms ICM 3 A Base C
8.15. Size:380K semtech
st13007.pdf
ST 13007 NPN Silicon Transistor for high voltage, high-speed power switching application TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 9 V Collector Current IC 8 A O Total Power Dissipation (Ta = 25 C) Ptot 2 W O Total Power Dissipation (
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