ST600K
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ST600K
Código: 600K
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 12.5
W
Tensión colector-base (Vcb): 120
V
Tensión colector-emisor (Vce): 120
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 40
pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: SOT32
Búsqueda de reemplazo de transistor bipolar ST600K
ST600K
Datasheet (PDF)
..1. Size:56K st
st600k.pdf
ST600KLOW VOLTAGE NPN POWER TRANSISTORPRELIMINARY DATAFeatures LOW SATURATION VOLTAGEApplications SCANNING VELOCITY MODULATION IN CRT DISPLAYS MEDIUM POWER LINEAR AND SWITCHING 1APPLICATIONS 23 SOT-32Description(TO-216)The ST600K is manufactured by low voltageEpitaxial Base technology and it is housed inSOT-32 plastic package. The complementaryPNP ty
9.1. Size:1115K winsok
wst6002.pdf
WST6002 N-Ch MOSFETGeneral Description Product SummeryThe WST6002 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 30V 5 100mAfor most of the small power switching and load switch applications. Applications The WST6002 meet the RoHS and Green Product requirement with full func
9.2. Size:3678K winsok
wst6008.pdf
WST6008 N-Ch MOSFETGeneral Description Product SummeryThe WST6008 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 140m 154mAgate charge for most of the small power switching and load switch applications. Applications The WST6008 meet the RoHS and Green Product requirement with full
9.3. Size:546K winsok
wst6003.pdf
WST6003 P-Ch MOSFETProduct SummeryFeatures D TrenchFETr Power MOSFET: 1.8-V RatedBVDSS RDSON ID D Gate-Source ESD Protected: 2000 VD High-Side Switching-20V 1200m -0.35AD Low On-Resistance: 1.2 WD Low Threshold: 0.8 V (typ)D Fast Switching Speed: 14 nsApplications D S- Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirement
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.