ST600K Todos los transistores

 

ST600K Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ST600K

Código: 600K

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 12.5 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 120 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 40 pF

Ganancia de corriente contínua (hFE): 50

Encapsulados: SOT32

 Búsqueda de reemplazo de ST600K

- Selecciónⓘ de transistores por parámetros

 

ST600K datasheet

 ..1. Size:56K  st
st600k.pdf pdf_icon

ST600K

ST600K LOW VOLTAGE NPN POWER TRANSISTOR PRELIMINARY DATA Features LOW SATURATION VOLTAGE Applications SCANNING VELOCITY MODULATION IN CRT DISPLAYS MEDIUM POWER LINEAR AND SWITCHING 1 APPLICATIONS 2 3 SOT-32 Description (TO-216) The ST600K is manufactured by low voltage Epitaxial Base technology and it is housed in SOT-32 plastic package. The complementary PNP ty

 9.1. Size:1115K  winsok
wst6002.pdf pdf_icon

ST600K

WST6002 N-Ch MOSFET General Description Product Summery The WST6002 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 30V 5 100mA for most of the small power switching and load switch applications. Applications The WST6002 meet the RoHS and Green Product requirement with full func

 9.2. Size:3678K  winsok
wst6008.pdf pdf_icon

ST600K

WST6008 N-Ch MOSFET General Description Product Summery The WST6008 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 140m 154mA gate charge for most of the small power switching and load switch applications. Applications The WST6008 meet the RoHS and Green Product requirement with full

 9.3. Size:546K  winsok
wst6003.pdf pdf_icon

ST600K

WST6003 P-Ch MOSFET Product Summery Features D TrenchFETr Power MOSFET 1.8-V Rated BVDSS RDSON ID D Gate-Source ESD Protected 2000 V D High-Side Switching -20V 1200m -0.35A D Low On-Resistance 1.2 W D Low Threshold 0.8 V (typ) D Fast Switching Speed 14 ns Applications D S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirement

Otros transistores... ST13003K , ST13005 , ST13005N , ST13007 , ST13007D , ST13007DFP , ST1510FX , ST4460FX , S9013 , ST631K , ST83003 , ST8812FX , ST901T , ST93003 , STB13005 , STB13007DT4 , STBV32 .

History: 850AT | UN2121

 

 

 

 

↑ Back to Top
.