STD901T
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STD901T
Código: D901T
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 35
W
Tensión colector-base (Vcb): 500
V
Tensión colector-emisor (Vce): 350
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 4
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 1800
Paquete / Cubierta:
DPAK
Búsqueda de reemplazo de transistor bipolar STD901T
STD901T
Datasheet (PDF)
..1. Size:250K st
std901t st901t.pdf
ST901TSTD901THigh voltage NPN Darlington transistor for ignition coilFeatures High voltage special Darlington structureTAB Very rugged bipolar technologyTAB High DC current gain31Application3DPAK21 High ruggedness electronic ignition for small TO-220enginesDescriptionThe device is a high voltage NPN transistor in Figure 1. Internal schematic
9.1. Size:516K st
std90nh02l.pdf
STD90NH02LSTD90NH02L-1N-channel 24V - 0.0052 - 60A - DPAK/IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD90NH02L-1 24V
9.2. Size:802K st
std90n4f3 sti90n4f3 stp90n4f3 stu90n4f3.pdf
STD90N4F3, STI90N4F3STP90N4F3, STU90N4F3N-channel 40 V, 5.0 m, 80 A, DPAK, TO-220, IPAK, I2PAKSTripFET III Power MOSFETFeaturesRDS(on) 3Type VDSS ID Pw3max 121STD90N4F3 40 V
9.3. Size:104K st
std909.pdf
STD909STD910 COMPLEMENTARY SILICON POWER TRANSISTORS ST PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES SURFACE-MOUNTING TO-252 (DPAK)POWER PACKAGE IN TAPE & REEL(SUFFIX T4) ELECTRICAL SIMILAR TO BD909 ANDBD9103APPLICATIONS1 GENERAL PURPOSE SWITCHING ANDAMPLIFIER GENERAL PURPOSE AMPLIFIERDPAKTO-252DESCRIPTION(Suffix T4)The STD909 and
9.4. Size:511K st
std90nh02lt4.pdf
STD90NH02LSTD90NH02L-1N-channel 24V - 0.0052 - 60A - DPAK/IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD90NH02L-1 24V
9.5. Size:317K st
std90n03l std90n03l-1.pdf
STD90N03LSTD90N03L-1N-channel 30V - 0.005 - 80A - DPAK/IPAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD90N03L 30V 0.0057 80A (1)STD90N03L-1 30V 0.0057 80A (1)332 11. Pulse width limited by safe operating area1 RDS(on)*Qg industrys benchmark Conduction losses reducedIPAKDPAK Switching losses reduced Low threshold
9.6. Size:383K st
std90n02l-1 std90n02l.pdf
STD90N02LSTD90N02L-1N-channel 25V - 0.0052 - 60A - DPAK - IPAKSTripFET III Power MOSFETFeaturesRDS(on) Type VDSS IDMaxSTD90N02L 25V
9.7. Size:387K st
std90n02l std90n02l-1.pdf
STD90N02LSTD90N02L-1N-channel 25V - 0.0052 - 60A - DPAK - IPAKSTripFET III Power MOSFETFeaturesRDS(on) Type VDSS IDMaxSTD90N02L 25V
9.8. Size:882K cn vbsemi
std90n4f3.pdf
STD90N4F3www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIMUM R
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