STL128D
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STL128D
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 65
W
Tensión colector-base (Vcb): 700
V
Tensión colector-emisor (Vce): 400
V
Tensión emisor-base (Veb): 9
V
Corriente del colector DC máxima (Ic): 4
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta:
TO220
TO220FP
Búsqueda de reemplazo de transistor bipolar STL128D
STL128D
Datasheet (PDF)
0.1. Size:626K st
stl128d-dfp.pdf 
STL128DHigh voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parametersTAB Very high switching speed Integrated antiparallel collector-emitter diodeApplications 332211 Electronic ballast for fluorescent lightingTO-220TO-220FP Flyback and forward single transistor low power convertersDescript
0.2. Size:418K st
stl128dn-dnfp stld128dnt4.pdf
STL128DNHigh voltage fast-switching NPN power transistorFeaturesTAB High voltage capability Low spread of dynamic parameters Very high switching speed33 Large RBSOA 2211 Integrated antiparallel collector-emitter diodeTO-220 TO-220FPTABApplications Electronic ballast for fluorescent lighting 31 Flyback and forward single transistor low
9.1. Size:649K st
stl120n2vh5.pdf
STL120N2VH5N-channel 20 V, 0.002 , 28 A STripFET V Power MOSFETin PowerFLAT 5x6 packageFeaturesOrder code VDSS RDS(on) max IDSTL120N2VH5 20 V
9.2. Size:445K st
stl12n3llh5.pdf
STL12N3LLH5N-channel 30 V, 0.0079 , 12 A, PowerFLAT (3.3 x 3.3)STripFET V Power MOSFETFeaturesRDS(on) Order code VDSS IDmaxSTL12N3LLH5 30 V
9.3. Size:460K st
stl12n65m2.pdf
STL12N65M2 N-channel 650 V, 0.62 typ., 5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTL12N65M2 650 V 0.75 5 A 48 W 1 Extremely low gate charge 23 Excellent output capacitance (COSS) profile 4 100% avalanche tested Zener-protected PowerFLAT 5x6 HVAp
9.4. Size:1077K st
stl12p6f6.pdf
STL12P6F6P-channel 60 V, 0.13 typ., 12 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max IDSTL12P6F6 60 V 0.16 @ 10 V 12 A Very low on-resistance12 Very low gate charge34 High avalanche ruggedness Low gate drive power lossPowerFLAT 5x6Applications Switching applicati
9.5. Size:482K st
stl120n4f6ag.pdf
STL120N4F6AG Automotive-grade N-channel 40 V, 2.9 m typ., 120 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V R max. I DS DS(on) DSTL120N4F6AG 40 V 3.6 m 120 A 1234 Designed for automotive applications and AEC-Q101 qualified Very low on-resistance PowerFLAT 5x6 Very low gate charge
9.6. Size:461K st
stl12n60m2.pdf
STL12N60M2 N-channel 600 V, 0.400 typ., 6.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTL12N60M2 600 V 0.495 6.5 A 52 W 1 Extremely low gate charge 23 Excellent output capacitance (COSS) profile 4 100% avalanche tested Zener-protected PowerFLAT 5x6 HV
9.7. Size:1374K st
stl12n65m5.pdf
STL12N65M5N-channel 650 V, 0.475 typ., 8.5 A MDmesh V Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDSS RDS(on) max IDSTL12N65M5 710 V 0.530 8.5 A Outstanding RDS(on)*area1 Extremely large avalanche performance23 Gate charge minimized4TM Very low intrinsic capacitancePowerFLAT 5x6 HV 100% ava
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
