2SA2215 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA2215

Código: WE

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 2.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 200

Encapsulados: UFM

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2SA2215 datasheet

 ..1. Size:125K  toshiba
2sa2215.pdf pdf_icon

2SA2215

2SA2215 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2215 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 Strobe Applications 1.7 0.1 High DC current gain hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage VCE (sat) = -0.19 V (max) 1 High-speed switching tf = 40 ns (typ.) 3 2 Absolute Maximum Rati

 8.1. Size:165K  toshiba
2sa2219.pdf pdf_icon

2SA2215

2SA2219 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2219 Audio Frequency Amplifier Applications Unit mm High collector voltage VCEO = 160 V (min) Small collector output capacitance Cob = 17pF (typ.) High transition frequency fT = 100MHz (typ.) Complementary to 2SC6139 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit

 8.2. Size:126K  toshiba
2sa2214.pdf pdf_icon

2SA2215

2SA2214 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2214 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 Strobe Applications 1.7 0.1 High DC current gain hFE = 200 to 500 (IC = -1.5 A) Low collector-emitter saturation voltage VCE (sat) = -0.14 V (max) 1 High-speed switching tf = 37 ns (typ.) 3 2 Absolute Maximum Rati

 8.3. Size:53K  sanyo
2sa2210.pdf pdf_icon

2SA2215

Ordering number ENA0667 2SA2210 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2210 High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute M

Otros transistores... SMBT3906U, BUL63B, BUL63A, 2SA2154, 2SA2154CT, 2SA2154MFV, 2SA2195, 2SA2214, 2SC2240, 2SA562TM, 2SC1815L, BUL62B, 2SC4666, 2SC4738F, 2SC4738FT, 2SC5232, 2SC5233