Справочник транзисторов. 2SA2215

 

Биполярный транзистор 2SA2215 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SA2215
   Маркировка: WE
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.5 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 2.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: UFM

 Аналоги (замена) для 2SA2215

 

 

2SA2215 Datasheet (PDF)

 ..1. Size:125K  toshiba
2sa2215.pdf

2SA2215
2SA2215

2SA2215 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2215 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.1Strobe Applications 1.70.1 High DC current gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) 1 High-speed switching: tf = 40 ns (typ.) 32Absolute Maximum Rati

 8.1. Size:165K  toshiba
2sa2219.pdf

2SA2215
2SA2215

2SA2219 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2219 Audio Frequency Amplifier Applications Unit: mm High collector voltage : VCEO = 160 V (min) Small collector output capacitance : Cob = 17pF (typ.) High transition frequency : fT = 100MHz (typ.) Complementary to 2SC6139 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit

 8.2. Size:126K  toshiba
2sa2214.pdf

2SA2215
2SA2215

2SA2214 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2214 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.1Strobe Applications 1.70.1 High DC current gain: hFE = 200 to 500 (IC = -1.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.14 V (max) 1 High-speed switching: tf = 37 ns (typ.) 32Absolute Maximum Rati

 8.3. Size:53K  sanyo
2sa2210.pdf

2SA2215
2SA2215

Ordering number : ENA0667 2SA2210SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon Transistor2SA2210High-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.SpecificationsAbsolute M

 8.4. Size:241K  onsemi
2sa2210.pdf

2SA2215
2SA2215

Ordering number : ENA0667B2SA2210Bipolar Transistorhttp://onsemi.com ( )50V, 20A, Low VCE sat PNP TO-220F-3SGApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switchingSpecificationsAbsolute Maximum Ratings at Ta=25CPa

 8.5. Size:176K  onsemi
2sa2210-1e.pdf

2SA2215
2SA2215

Ordering number : ENA0667B2SA2210Bipolar Transistorhttp://onsemi.com ( )50V, 20A, Low VCE sat PNP TO-220F-3SGApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switchingSpecificationsAbsolute Maximum Ratings at Ta=25CPa

 8.6. Size:218K  inchange semiconductor
2sa2210.pdf

2SA2215
2SA2215

isc Silicon PNP Power Transistor 2SA2210DESCRIPTIONLarge current capacitanceHigh-speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSrelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -50 VCBOV Collector-Em

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top