2SC4666 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC4666

Código: PA_PB

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.1 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 3.5 pF

Ganancia de corriente contínua (hFE): 600

Encapsulados: USM

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2SC4666 datasheet

 ..1. Size:261K  toshiba
2sc4666.pdf pdf_icon

2SC4666

2SC4666 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4666 Audio Frequency Amplifier Applications Unit mm Switching Applications High hFE h = 600 3600 FE High voltage V = 50 V CEO High collector current I = 150 mA (max) C Small package Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage V

 8.1. Size:246K  toshiba
2sc4667.pdf pdf_icon

2SC4666

2SC4667 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4667 Ultra High Speed Switching Applications Unit mm Computer, Counter Applications High transition frequency fT = 400 MHz (typ.) Low saturation voltage V = 0.3 V (max) CE (sat) High speed switching time t = 15 ns (typ.) stg Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol R

 8.2. Size:94K  sanyo
2sc4660.pdf pdf_icon

2SC4666

Ordering number EN4692 NPN Epitaxial Planar Silicon Transistor 2SC4660 High-Definition CRT Display Video Output Driver Applications Features Package Dimensions High fT (fT=2.2GHz typ) unit mm Large current (IC=300mA) 2042B Adoption of FBET process. [2SC4660] 8.0 4.0 3.3 1.0 1.0 3.0 1.6 0.8 0.8 0.75 0.7 1 Emitter 2 Collector 3 Base 2.4 4.8 SANYO TO-1

 8.3. Size:98K  jmnic
2sc4663.pdf pdf_icon

2SC4666

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4663 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEO Collector-

Otros transistores... 2SA2154CT, 2SA2154MFV, 2SA2195, 2SA2214, 2SA2215, 2SA562TM, 2SC1815L, BUL62B, 2SD669, 2SC4738F, 2SC4738FT, 2SC5232, 2SC5233, 2SC5376, 2SC5376CT, 2SC5376F, 2SC5376FV