2SC6132 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC6132

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 160 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 9.5 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO92

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2SC6132 datasheet

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 2sc6132.pdf pdf_icon

2SC6132

 8.1. Size:144K  toshiba
 2sc6134.pdf pdf_icon

2SC6132

2CS6134 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6134 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 Strobe Applications 1.7 0.1 High DC current gain hFE = 250 to 400 (IC = 0.3A) 1 Low collector-emitter saturation voltage VCE (sat) = 0.14 V (max) 3 2 High-speed switching tf = 25 ns (typ.) Absolute Maximum Ratings (

 8.2. Size:191K  toshiba
 2sc6136.pdf pdf_icon

2SC6132

2SC6136 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6136 High Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications High speed switching tf = 0.18 s (typ.) (IC = 0.3 A) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltag

 8.3. Size:140K  toshiba
 2sc6133.pdf pdf_icon

2SC6132

2SC6133 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6133 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 1.7 0.1 High DC current gain hFE = 400 to 1000 (IC = 0.15A) 1 Low collector-emitter saturation voltage VCE (sat) = 0.12 V (max) 3 2 High-speed switching tf = 45 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Char

MOSTRAR MÁS

Otros transistores... 2SC5720, 2SC5765, 2SC5766, 2SC6026, 2SC6026CT, 2SC6026MFV, 2SC6067, 2SC6100, BD333, 2SC6133, 2SC6134, 2SC6135, 2SC752(G)TM, TTA1586FU, TTC4116FU, 2SA1873, 2SC4944