All Transistors. 2SC6132 Datasheet

 

2SC6132 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC6132

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Collector Capacitance (Cc): 9.5 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO92

2SC6132 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC6132 Datasheet (PDF)

0.1. 2sc6132.pdf Size:230K _toshiba

2SC6132
2SC6132

2SC6132 NPN 2SC6132 : mm : VCE (sat) = 0.15V () (Ta = 25C)

8.1. 2sc6135.pdf Size:140K _toshiba

2SC6132
2SC6132

2SC6135 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6135 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.1Strobe Applications 1.70.11 High DC current gain: hFE = 400 to 1000 (IC = 0.1A) Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max) 32 High-speed switching: tf = 85 ns (typ.) Absolute Maximum Rating

8.2. 2sc6133.pdf Size:140K _toshiba

2SC6132
2SC6132

2SC6133 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6133 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.11.70.1 High DC current gain: hFE = 400 to 1000 (IC = 0.15A) 1 Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) 32 High-speed switching: tf = 45 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Char

 8.3. 2sc6139.pdf Size:185K _toshiba

2SC6132
2SC6132

2SC6139 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6139 Audio Frequency Amplifier Applications Unit: mm High collector voltage : VCEO = 160 V (min) Small collector output capacitance : Cob = 12pF (typ.) High transition frequency : fT = 100MHz (typ.) Complementary to 2SA2219 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCo

8.4. 2sc6134.pdf Size:144K _toshiba

2SC6132
2SC6132

2CS6134 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6134 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.1Strobe Applications 1.70.1 High DC current gain: hFE = 250 to 400 (IC = 0.3A) 1 Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) 32 High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (

 8.5. 2sc6136.pdf Size:191K _toshiba

2SC6132
2SC6132

2SC6136 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6136 High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications High speed switching: tf = 0.18 s (typ.) (IC = 0.3 A) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 600 VCollector-emitter voltag

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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