HN1A01FE Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HN1A01FE  📄📄 

Código: D1

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.1 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 80 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: ES6

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HN1A01FE datasheet

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HN1A01FE

HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FE Unit mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current VCEO = -50V, IC = -150mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25 C)

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HN1A01FE

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HN1A01FE

HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01F Unit mm Audio-Frequency General-Purpose Amplifier Applications Small package (dual type) High voltage and high current VCEO = -50 V, IC = -150 mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = -0.1 mA) / hFE (IC = -2 mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25

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HN1A01FE

HN1A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FU Unit mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current V =-50V, I =-150mA (max) CEO C High h h = 120 400 FE FE Excellent h linearity FE h (I =-0.1mA) / h (I =-2mA) = 0.95 (typ.) FE C FE C Absolute Maximum Ratings

MOSTRAR MÁS

Otros transistores... 2SC6134, 2SC6135, 2SC752(G)TM, TTA1586FU, TTC4116FU, 2SA1873, 2SC4944, HN1A01F, C945, HN1A01FU, HN1A02F, HN1A07F, HN1A26FS, HN1B01F, HN1B01FU, HN1B04F, HN1B04FE