HN1B01FU . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HN1B01FU
Código: 1AY_1AG
Material: Si
Polaridad de transistor: NPN*PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120 MHz
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: US6
Búsqueda de reemplazo de transistor bipolar HN1B01FU
HN1B01FU Datasheet (PDF)
hn1b01fu.pdf
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HN1B01FU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN1B01FU Audio Frequency General Purpose Amplifier Applications Unit in mmQ1: High voltage and high current : V = -50V, I = -150mA (max) CEO C High h : h = 120~400 FE FE Excellent h linearity FE: h (I = -0.1mA) / h (I = -2mA) = 0.95 (typ.) FE C FE CQ2
hn1b01f.pdf
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HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio-Frequency General-Purpose Amplifier Applications Unit: mmQ1: High voltage and high current : V = -50 V, I = -150 mA (max) CEO C High h : h = 120~400 FE FE Excellent h linearity FE: h (I = -0.1 mA) / h (I = -2 mA) = 0.95 (typ.) FE C FE CQ2
hn1b01fdw1t1g shn1b01fdw1t1g.pdf
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HN1B01FDW1T1G,SHN1B01FDW1T1GComplementary DualGeneral PurposeAmplifier Transistorwww.onsemi.comPNP and NPN Surface MountFeaturesSC-74 High Voltage and High Current: VCEO = 50 V, IC = 200 mACASE 318F High hFE: hFE = 200X400 STYLE 3 Moisture Sensitivity Level: 1 ESD Rating(6) (5) (4) Human Body Model: 3A Machine Model: C S Prefix for Automoti
hn1b01fdw1t1-d.pdf
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HN1B01FDW1T1Complementary DualGeneral PurposeAmplifier TransistorPNP and NPN Surface Mounthttp://onsemi.comFeatures(6) (5) (4) High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400Q1 Q2 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A- Machine Model: C(1) (2) (3) Pb-Free Package is AvailableMAXIMUM RATINGS (
shn1b01fdw1t1g.pdf
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HN1B01FDW1T1G,SHN1B01FDW1T1GComplementary DualGeneral PurposeAmplifier Transistorhttp://onsemi.comPNP and NPN Surface MountFeaturesSC-74 High Voltage and High Current: VCEO = 50 V, IC = 200 mACASE 318F High hFE: hFE = 200X400 STYLE 3 Moisture Sensitivity Level: 1 ESD Rating(6) (5) (4) Human Body Model: 3A Machine Model: CQ1 Q2 AEC-Q101 Qu
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: MUN5135
History: MUN5135
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Liste
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