HN1B01FU Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HN1B01FU

Código: 1AY_1AG

Material: Si

Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 120 MHz

Ganancia de corriente contínua (hFE): 120

Encapsulados: US6

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HN1B01FU datasheet

 ..1. Size:367K  toshiba
 hn1b01fu.pdf pdf_icon

HN1B01FU

HN1B01FU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN1B01FU Audio Frequency General Purpose Amplifier Applications Unit in mm Q1 High voltage and high current V = -50V, I = -150mA (max) CEO C High h h = 120 400 FE FE Excellent h linearity FE h (I = -0.1mA) / h (I = -2mA) = 0.95 (typ.) FE C FE C Q2

 7.1. Size:367K  toshiba
 hn1b01f.pdf pdf_icon

HN1B01FU

HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio-Frequency General-Purpose Amplifier Applications Unit mm Q1 High voltage and high current V = -50 V, I = -150 mA (max) CEO C High h h = 120 400 FE FE Excellent h linearity FE h (I = -0.1 mA) / h (I = -2 mA) = 0.95 (typ.) FE C FE C Q2

 7.2. Size:151K  onsemi
 hn1b01fdw1t1g shn1b01fdw1t1g.pdf pdf_icon

HN1B01FU

HN1B01FDW1T1G, SHN1B01FDW1T1G Complementary Dual General Purpose Amplifier Transistor www.onsemi.com PNP and NPN Surface Mount Features SC-74 High Voltage and High Current VCEO = 50 V, IC = 200 mA CASE 318F High hFE hFE = 200X400 STYLE 3 Moisture Sensitivity Level 1 ESD Rating (6) (5) (4) Human Body Model 3A Machine Model C S Prefix for Automoti

 7.3. Size:52K  onsemi
 hn1b01fdw1t1-d.pdf pdf_icon

HN1B01FU

HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http //onsemi.com Features (6) (5) (4) High Voltage and High Current VCEO = 50 V, IC = 200 mA High hFE hFE = 200X400 Q1 Q2 Moisture Sensitivity Level 1 ESD Rating - Human Body Model 3A - Machine Model C (1) (2) (3) Pb-Free Package is Available MAXIMUM RATINGS (

MOSTRAR MÁS

Otros transistores... 2SC4944, HN1A01F, HN1A01FE, HN1A01FU, HN1A02F, HN1A07F, HN1A26FS, HN1B01F, C5198, HN1B04F, HN1B04FE, HN1B04FU, HN1B26FS, HN1C01F, HN1C01FE, HN1C01FU, HN1C03F