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HN1B01FU Specs and Replacement


   Type Designator: HN1B01FU
   SMD Transistor Code: 1AY_1AG
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 120 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: US6
 

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HN1B01FU detailed specifications

 ..1. Size:367K  toshiba
hn1b01fu.pdf pdf_icon

HN1B01FU

HN1B01FU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN1B01FU Audio Frequency General Purpose Amplifier Applications Unit in mm Q1 High voltage and high current V = -50V, I = -150mA (max) CEO C High h h = 120 400 FE FE Excellent h linearity FE h (I = -0.1mA) / h (I = -2mA) = 0.95 (typ.) FE C FE C Q2... See More ⇒

 7.1. Size:367K  toshiba
hn1b01f.pdf pdf_icon

HN1B01FU

HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio-Frequency General-Purpose Amplifier Applications Unit mm Q1 High voltage and high current V = -50 V, I = -150 mA (max) CEO C High h h = 120 400 FE FE Excellent h linearity FE h (I = -0.1 mA) / h (I = -2 mA) = 0.95 (typ.) FE C FE C Q2... See More ⇒

 7.2. Size:151K  onsemi
hn1b01fdw1t1g shn1b01fdw1t1g.pdf pdf_icon

HN1B01FU

HN1B01FDW1T1G, SHN1B01FDW1T1G Complementary Dual General Purpose Amplifier Transistor www.onsemi.com PNP and NPN Surface Mount Features SC-74 High Voltage and High Current VCEO = 50 V, IC = 200 mA CASE 318F High hFE hFE = 200X400 STYLE 3 Moisture Sensitivity Level 1 ESD Rating (6) (5) (4) Human Body Model 3A Machine Model C S Prefix for Automoti... See More ⇒

 7.3. Size:52K  onsemi
hn1b01fdw1t1-d.pdf pdf_icon

HN1B01FU

HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http //onsemi.com Features (6) (5) (4) High Voltage and High Current VCEO = 50 V, IC = 200 mA High hFE hFE = 200X400 Q1 Q2 Moisture Sensitivity Level 1 ESD Rating - Human Body Model 3A - Machine Model C (1) (2) (3) Pb-Free Package is Available MAXIMUM RATINGS (... See More ⇒

Detailed specifications: 2SC4944 , HN1A01F , HN1A01FE , HN1A01FU , HN1A02F , HN1A07F , HN1A26FS , HN1B01F , C5198 , HN1B04F , HN1B04FE , HN1B04FU , HN1B26FS , HN1C01F , HN1C01FE , HN1C01FU , HN1C03F .

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