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HN1B04F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HN1B04F
   Código: 50
   Material: Si
   Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 35 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 7 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: SM6
 

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HN1B04F Datasheet (PDF)

 ..1. Size:297K  toshiba
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HN1B04F

HN1B04F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN1B04F Unit: mmAudio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity : hFE(2) = 25 (min) at VCE = -6V, IC = -400mA Q2: Excellent hFE linearity : hFE(2) = 25 (min) at VCE = 6V

 0.1. Size:390K  toshiba
 hn1b04fu.pdf pdf_icon

HN1B04F

HN1B04FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FU Unit: mmAudio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : V = 50V, I = 150mA (max) CEO C High h : h = 120~400 FE FE Excellent h linearity FE: h (I = 0.1mA) / h (I = 2mA) = 0.95 (typ.) FE C FE CQ2:

 0.2. Size:339K  toshiba
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HN1B04F

HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit: mmAudio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120 to 400 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2: High voltage

 0.3. Size:313K  toshiba
 hn1b04fe.pdf pdf_icon

HN1B04F

HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit: mmAudio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2: High voltage and

MOSTRAR MÁS

Otros transistores... HN1A01F , HN1A01FE , HN1A01FU , HN1A02F , HN1A07F , HN1A26FS , HN1B01F , HN1B01FU , D882 , HN1B04FE , HN1B04FU , HN1B26FS , HN1C01F , HN1C01FE , HN1C01FU , HN1C03F , HN1C03FU .

 

 
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