HN1B04F Specs and Replacement
Type Designator: HN1B04F
SMD Transistor Code: 50
Material of Transistor: Si
Polarity: NPN*PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: SM6
HN1B04F Substitution
- BJT ⓘ Cross-Reference Search
HN1B04F datasheet
HN1B04F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN1B04F Unit mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1 Excellent hFE linearity hFE(2) = 25 (min) at VCE = -6V, IC = -400mA Q2 Excellent hFE linearity hFE(2) = 25 (min) at VCE = 6V... See More ⇒
HN1B04FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FU Unit mm Audio Frequency General Purpose Amplifier Applications Q1 High voltage and high current V = 50V, I = 150mA (max) CEO C High h h = 120 400 FE FE Excellent h linearity FE h (I = 0.1mA) / h (I = 2mA) = 0.95 (typ.) FE C FE C Q2 ... See More ⇒
HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit mm Audio Frequency General Purpose Amplifier Applications Q1 High voltage and high current VCEO = 50V, IC = 150mA (max) High hFE hFE = 120 to 400 Excellent hFE linearity hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2 High voltage... See More ⇒
HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit mm Audio Frequency General Purpose Amplifier Applications Q1 High voltage and high current VCEO = 50V, IC = 150mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2 High voltage and ... See More ⇒
Detailed specifications: HN1A01F, HN1A01FE, HN1A01FU, HN1A02F, HN1A07F, HN1A26FS, HN1B01F, HN1B01FU, BC337, HN1B04FE, HN1B04FU, HN1B26FS, HN1C01F, HN1C01FE, HN1C01FU, HN1C03F, HN1C03FU
Keywords - HN1B04F pdf specs
HN1B04F cross reference
HN1B04F equivalent finder
HN1B04F pdf lookup
HN1B04F substitution
HN1B04F replacement
