HN1C03FU . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HN1C03FU
Código: C3A_C3B
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 25 V
Corriente del colector DC máxima (Ic): 0.3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30 MHz
Capacitancia de salida (Cc): 4.8 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: US6
Búsqueda de reemplazo de transistor bipolar HN1C03FU
HN1C03FU Datasheet (PDF)
hn1c03fu.pdf
HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process) HN1C03FU Unit: mmFor Muting and Switching Applications Including two devices in US6 (ultra super mini type with 6 leads) High emitter-base voltage: V = 25V (min) EBO High reverse h : reverse h = 150 (typ.)(V =-2V, I =-4mA) FE FE CE C Low on resistance: R = 1 (typ.)(I = 5mA) ON BAbsolute Maximum
hn1c03f.pdf
HN1C03F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C03F For Muting And Switching Applications Unit in mm Including two devices in SM6 (Super mini type with 6 leads) High emitter-base voltage: V = 25V (min) EBO High reverse h : reverse h = 150 (typ.)(V =-2V, I =-4mA) FE FE CE C Low on resistance: R = 1 (typ.)(IB = 5mA) ONAbsolute Maximum Rating
hn1c01fu.pdf
HN1C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C01FU Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : V = 50V, I = 150mA (max) CEO C High h : h = 120~400 FE FE Excellent h linearity FE: h (I = 0.1mA) / h (I = 2mA) = 0.95 (typ.) FE C FE CAbsolute Maximum Ratings
hn1c01fe.pdf
HN1C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C01FE Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C) (Q
hn1c05fe.pdf
HN1C05FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C05FE Unit: mmLow Frequency Amplifier Applications Muting Application Switching Application Low Saturation Voltage: VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA High Collector Current :IC=400mA(Max.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating UnitCollec
hn1c07f.pdf
HN1C07F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C07F Unit: mmAudio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications Excellent Currrent gain(hFE )linearity : hFE(2) =25 (min) at VCE = 6V IC = 400mA Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating UnitCollector
hn1c01f.pdf
HN1C01F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C01F Unit: mmAudio-Frequency General-Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = 50 V, IC = 150 mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1 mA) / hFE (IC = 2 mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C)
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Liste
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