RN1108CT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RN1108CT

Código: L7

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 22 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.47

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.05 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 1.2 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT883 CST3

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RN1108CT datasheet

 8.1. Size:361K  toshiba
rn1107mfv rn1108mfv rn1109mfv.pdf pdf_icon

RN1108CT

RN1107MFV RN1109MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1107MFV,RN1108MFV,RN1109MFV Unit mm 1.2 0.05 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.80 0.05 Ultra-small package, suited to very high density mounting 1 1 Incorporating a bias resistor into the transistor reduc

 8.2. Size:129K  toshiba
rn1107fs rn1108fs rn1109fs.pdf pdf_icon

RN1108CT

RN1107FS RN1109FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1107FS,RN1108FS,RN1109FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment

 9.1. Size:147K  toshiba
rn1101f-1106f xa-b-c-d-e-f sot490.pdf pdf_icon

RN1108CT

RN1101F RN1106F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101F,RN1102F,RN1103F RN1104F,RN1105F,RN1106F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2101F RN2106F Equivalent

 9.2. Size:164K  toshiba
rn1107act rn1109act.pdf pdf_icon

RN1108CT

RN1107ACT RN1109ACT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1107ACT, RN1108ACT, RN1109ACT Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications TOP View 0.6 0.05 Extra small package(CST3) is applicable for extra high density 0.5 0.03 fabrication. Incorporating a bias resis

Otros transistores... RN1106MFV, RN1106, RN1107ACT, RN1107CT, RN1107FS, RN1107MFV, RN1107, RN1108ACT, 431, RN1108FS, RN1108MFV, RN1108, RN1109ACT, RN1109CT, RN1109FS, RN1109MFV, RN1109