RN1109CT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RN1109CT

Código: L8

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 47 kOhm

Resistencia Base-Emisor R2 = 22 kOhm

Ratio típica de resistencia R1/R2 = 2.1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.05 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 15 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 1.2 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT883 CST3

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RN1109CT datasheet

 ..1. Size:151K  toshiba
 rn1107ct rn1109ct.pdf pdf_icon

RN1109CT

RN1107CT RN1109CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1107CT,RN1108CT,RN1109CT Switching Applications Unit mm Inverter Circuit Applications 0.6 0.05 Interface Circuit Applications 0.5 0.03 Driver Circuit Applications Incorporating a bias resistor into a transistor reduces the number of parts, which e

 8.1. Size:164K  toshiba
 rn1107act rn1109act.pdf pdf_icon

RN1109CT

RN1107ACT RN1109ACT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1107ACT, RN1108ACT, RN1109ACT Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications TOP View 0.6 0.05 Extra small package(CST3) is applicable for extra high density 0.5 0.03 fabrication. Incorporating a bias resis

 8.2. Size:339K  toshiba
 rn1107 rn1109.pdf pdf_icon

RN1109CT

RN1107 1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107, RN1108, RN1109 Unit mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors. Simplified circuit design Reduced number of parts and simplified manufacturing process Complementary to RN2107 to 2109 Equivalent Circuit and Bias Resistor V

 8.3. Size:361K  toshiba
 rn1107mfv rn1108mfv rn1109mfv.pdf pdf_icon

RN1109CT

RN1107MFV RN1109MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1107MFV,RN1108MFV,RN1109MFV Unit mm 1.2 0.05 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.80 0.05 Ultra-small package, suited to very high density mounting 1 1 Incorporating a bias resistor into the transistor reduc

MOSTRAR MÁS

Otros transistores... RN1107MFV, RN1107, RN1108ACT, RN1108CT, RN1108FS, RN1108MFV, RN1108, RN1109ACT, BD136, RN1109FS, RN1109MFV, RN1109, RN1110ACT, RN1110CT, RN1110FS, RN1110MFV, RN1110