RN1114MFV Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RN1114MFV

Código: XQ

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 1 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hFE): 50

Encapsulados: SOT723 VESM

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RN1114MFV datasheet

 ..1. Size:174K  toshiba
 rn1114mfv rn1115mfv rn1116mfv rn1117mfv rn1118mfv.pdf pdf_icon

RN1114MFV

RN1114MFV RN1118MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114MFV,RN1115MFV,RN1116MFV,RN1117MFV,RN1118MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Unit mm Driver Circuit Applications 1.2 0.05 With built-in bias resistors 0.80 0.05 Simplify circuit design Reduce a quantity of parts and manufac

 8.1. Size:207K  toshiba
 rn1114 rn1118.pdf pdf_icon

RN1114MFV

RN1114 RN1118 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114, RN1115, RN1116, RN1117, RN1118 Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications With built-in bias resistors. Simplified circuit design Reduced number of parts and simplified manufacturing process Complementary to RN2114 to 2118 Equivalent Circuit a

 8.2. Size:160K  toshiba
 rn1114-rn1118.pdf pdf_icon

RN1114MFV

RN1114 RN1118 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114,RN1115,RN1116,RN1117,RN1118 Switching, Inverter Circuit, Interface Circuit Unit mm And Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2114 2118 Equivalent Circuit and Bias Resistor

 8.3. Size:209K  toshiba
 rn1114f rn1118f.pdf pdf_icon

RN1114MFV

RN1114F RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2114F to 2118F Equivalent Circuit and Bi

MOSTRAR MÁS

Otros transistores... RN1112MFV, RN1112, RN1113ACT, RN1113CT, RN1113FS, RN1113MFV, RN1113, RN1114F, A1015, RN1114, RN1115F, RN1115MFV, RN1115, RN1116FT, RN1116MFV, RN1116, RN1117FT