RN1132MFV Todos los transistores

 

RN1132MFV . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RN1132MFV
   Código: X4
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 200 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 0.7 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT723 VESM
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RN1132MFV Datasheet (PDF)

 ..1. Size:160K  toshiba
 rn1131mfv rn1132mfv.pdf pdf_icon

RN1132MFV

RN1131MFV,RN1132MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1131MFV,RN1132MFV Switching Applications Unit: mmInverter Circuit Applications 1.20.05Interface Circuit Applications 0.80.05Driver Circuit Applications With built-in bias resistors 1 Simplify circuit design 2 3 Reduce a quantity of parts and manufacturing process Complement

 9.1. Size:151K  toshiba
 rn1130mfv.pdf pdf_icon

RN1132MFV

RN1130MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1130MFV Switching Applications Unit: mmInverter Circuit Applications 1.20.05Interface Circuit Applications 0.80.05Driver Circuit Applications 1 With built-in bias resistors Simplify circuit design 2 3 Reduce a quantity of parts and manufacturing process Complementary to RN2130MFV E

 9.2. Size:152K  nxp
 pbrn113es pbrn113e pbrn113ek.pdf pdf_icon

RN1132MFV

PBRN113E seriesNPN 800 mA, 40 V BISS RETs; R1 = 1 k, R2 = 1 kRev. 01 1 March 2007 Product data sheet1. Product profile1.1 General description800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-EquippedTransistors (RET) family in small plastic packages.Table 1. Product overviewType number PackageNXP JEITA JEDECPBRN113EK SOT346 SC-59A TO-236PBRN113ES

 9.3. Size:147K  nxp
 pbrn113e.pdf pdf_icon

RN1132MFV

PBRN113E seriesNPN 800 mA, 40 V BISS RETs; R1 = 1 k, R2 = 1 kRev. 01 1 March 2007 Product data sheet1. Product profile1.1 General description800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-EquippedTransistors (RET) family in small plastic packages.Table 1. Product overviewType number PackageNXP JEITA JEDECPBRN113EK SOT346 SC-59A TO-236PBRN113ES

MOSTRAR MÁS

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BC848CW-G | 2SA815 | 2SA1706T-AN | 3DG2413K | 2SA795A | RT3YB7M

 

 
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