RN1132MFV Specs and Replacement

Type Designator: RN1132MFV

SMD Transistor Code: X4

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 200 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 0.7 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT723 VESM

 RN1132MFV Substitution

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RN1132MFV datasheet

 ..1. Size:160K  toshiba

rn1131mfv rn1132mfv.pdf pdf_icon

RN1132MFV

RN1131MFV,RN1132MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1131MFV,RN1132MFV Switching Applications Unit mm Inverter Circuit Applications 1.2 0.05 Interface Circuit Applications 0.8 0.05 Driver Circuit Applications With built-in bias resistors 1 Simplify circuit design 2 3 Reduce a quantity of parts and manufacturing process Complement... See More ⇒

 9.1. Size:151K  toshiba

rn1130mfv.pdf pdf_icon

RN1132MFV

RN1130MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1130MFV Switching Applications Unit mm Inverter Circuit Applications 1.2 0.05 Interface Circuit Applications 0.8 0.05 Driver Circuit Applications 1 With built-in bias resistors Simplify circuit design 2 3 Reduce a quantity of parts and manufacturing process Complementary to RN2130MFV E... See More ⇒

 9.2. Size:152K  nxp

pbrn113es pbrn113e pbrn113ek.pdf pdf_icon

RN1132MFV

PBRN113E series NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 1 k Rev. 01 1 March 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN113EK SOT346 SC-59A TO-236 PBRN113ES... See More ⇒

 9.3. Size:147K  nxp

pbrn113e.pdf pdf_icon

RN1132MFV

PBRN113E series NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 1 k Rev. 01 1 March 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN113EK SOT346 SC-59A TO-236 PBRN113ES... See More ⇒

Detailed specifications: RN1117, RN1118FT, RN1118F, RN1118MFV, RN1118, RN1119MFV, RN1130MFV, RN1131MFV, S8550, RN1301, RN1302, RN1303, RN1304, RN1305, RN1306, RN1307, RN1308

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