RN1307 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RN1307
Código: XH
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.21
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SOT323 SC70 USM
Búsqueda de reemplazo de RN1307
Principales características: RN1307
rn1307-rn1309.pdf
RN1307 RN1309 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1307,RN1308,RN1309 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2307 RN2309 Equivalent Circuit and Bias Resistor Values Typ
rn1301 rn1302 rn1303 rn1304 rn1305 rn1306.pdf
RN1301 RN1306 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1301,RN1302,RN1303 RN1304,RN1305,RN1306 Unit mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2301 to RN2306 Equivalent Circuit and
rn1301-rn1306.pdf
RN1301 RN1306 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1301,RN1302,RN1303 RN1304,RN1305,RN1306 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2301 RN2306 Equivalent Circuit and Bia
Otros transistores... RN1131MFV , RN1132MFV , RN1301 , RN1302 , RN1303 , RN1304 , RN1305 , RN1306 , 2SA1837 , RN1308 , RN1309 , RN1310 , RN1311 , RN1312 , RN1313 , RN1314 , RN1315 .
History: BD510
History: BD510
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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