RN1417 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RN1417
Código: XU
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 4.7 kOhm
Ratio típica de resistencia R1/R2 = 2.1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 15 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: SOT346 SC59 SMINI
Búsqueda de reemplazo de transistor bipolar RN1417
RN1417 Datasheet (PDF)
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RN1412,RN1413 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1412,RN1413 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2412, RN2413 Equivalent Circuit Maximum Ratings (Ta = 25C)
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RN1414RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414,RN1415,RN1416 RN1417,RN1418 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2414~RN2418 Equivalent Circuit and Bias Res
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