RN1905FS
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RN1905FS
Código: F4
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.047
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.05
W
Tensión colector-base (Vcb): 20
V
Tensión colector-emisor (Vce): 20
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.05
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 1.2
pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta:
SOT963
FS6
Búsqueda de reemplazo de transistor bipolar RN1905FS
RN1905FS
Datasheet (PDF)
9.1. Size:173K toshiba
rn1901afs rn1906afs.pdf
RN1901AFS~RN1906AFS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN1901AFS, RN1902AFS, RN1903AFS RN1904AFS, RN1905AFS, RN1906AFS Switching, Inverter Circuit, Interface Circuit and Driver Unit: mmCircuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine-pitch, Small-Mold (6-pi
9.2. Size:133K toshiba
rn1907fs rn1909fs.pdf
RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1907FS, RN1908FS, RN1909FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine pitch small mold (6-pin) package. 1 6 Incorporating a bi
9.3. Size:139K toshiba
rn1907-rn1909.pdf
RN1907~RN1909 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1907,RN1908,RN1909 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary
9.4. Size:465K toshiba
rn1901 rn1906.pdf
RN1901~RN1906 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1901,RN1902,RN1903 RN1904,RN1905,RN1906 Unit: mmSwitching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a qu
9.5. Size:133K toshiba
rn1901fs rn1906fs.pdf
RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine pitch small mold (6-pin) package. 1
9.6. Size:146K toshiba
rn1907afs rn1909afs.pdf
RN1907AFS~RN1909AFS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN1907AFS, RN1908AFS, RN1909AFS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) 1 6package. Incorpora
9.7. Size:196K toshiba
rn1907fe-rn1909fe.pdf
RN1907FE~RN1909FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1907FE, RN1908FE, RN1909FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count.
9.8. Size:543K toshiba
rn1901fe rn1906fe.pdf
RN1901FE~RN1906FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1901FE, RN1902FE, RN1903FE RN1904FE, RN1905FE, RN1906FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a t
9.9. Size:194K toshiba
rn1901fe-1906fe.pdf
RN1901FE~RN1906FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1901FE,RN1902FE,RN1903FE RN1904FE,RN1905FE,RN1906FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a trans
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