RN1906FE Todos los transistores

 

RN1906FE . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RN1906FE
   Código: XF
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 4.7 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT563 ES6

 Búsqueda de reemplazo de transistor bipolar RN1906FE

 

RN1906FE Datasheet (PDF)

 ..1. Size:543K  toshiba
rn1901fe rn1906fe.pdf pdf_icon

RN1906FE

RN1901FE RN1906FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1901FE, RN1902FE, RN1903FE RN1904FE, RN1905FE, RN1906FE Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a t

 7.1. Size:133K  toshiba
rn1901fs rn1906fs.pdf pdf_icon

RN1906FE

RN1901FS RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 1.0 0.05 0.8 0.05 0.1 0.05 0.1 0.05 Two devices are incorporated into a fine pitch small mold (6-pin) package. 1

 8.1. Size:173K  toshiba
rn1901afs rn1906afs.pdf pdf_icon

RN1906FE

RN1901AFS RN1906AFS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN1901AFS, RN1902AFS, RN1903AFS RN1904AFS, RN1905AFS, RN1906AFS Switching, Inverter Circuit, Interface Circuit and Driver Unit mm Circuit Applications 1.0 0.05 0.8 0.05 0.1 0.05 0.1 0.05 Two devices are incorporated into a fine-pitch, Small-Mold (6-pi

 8.2. Size:465K  toshiba
rn1901 rn1906.pdf pdf_icon

RN1906FE

RN1901 RN1906 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1901,RN1902,RN1903 RN1904,RN1905,RN1906 Unit mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a qu

Otros transistores... RN1904FE , RN1904FS , RN1904 , RN1905AFS , RN1905FE , RN1905FS , RN1905 , RN1906AFS , 2SC945 , RN1906FS , RN1906 , RN1907AFS , RN1907FE , RN1907FS , RN1907 , RN1908AFS , RN1908FE .

History: 2SD1150 | UN6221 | NB122HY | 2SA1162-HF | BD373A-10 | AC181KL | TI620

 

 
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