RN1906
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RN1906
Código: XF
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250
MHz
Capacitancia de salida (Cc): 3
pF
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta:
SOT363
SC88
US6
Búsqueda de reemplazo de transistor bipolar RN1906
RN1906
Datasheet (PDF)
..1. Size:465K toshiba
rn1901 rn1906.pdf
RN1901~RN1906 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1901,RN1902,RN1903 RN1904,RN1905,RN1906 Unit: mmSwitching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a qu
0.1. Size:173K toshiba
rn1901afs rn1906afs.pdf
RN1901AFS~RN1906AFS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN1901AFS, RN1902AFS, RN1903AFS RN1904AFS, RN1905AFS, RN1906AFS Switching, Inverter Circuit, Interface Circuit and Driver Unit: mmCircuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine-pitch, Small-Mold (6-pi
0.2. Size:133K toshiba
rn1901fs rn1906fs.pdf
RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine pitch small mold (6-pin) package. 1
0.3. Size:543K toshiba
rn1901fe rn1906fe.pdf
RN1901FE~RN1906FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1901FE, RN1902FE, RN1903FE RN1904FE, RN1905FE, RN1906FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a t
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