RN1907FE Todos los transistores

 

RN1907FE . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RN1907FE
   Código: F6_XH
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.21

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT563 ES6

 Búsqueda de reemplazo de transistor bipolar RN1907FE

 

RN1907FE Datasheet (PDF)

 0.1. Size:196K  toshiba
rn1907fe-rn1909fe.pdf pdf_icon

RN1907FE

RN1907FE RN1909FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1907FE, RN1908FE, RN1909FE Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count.

 7.1. Size:133K  toshiba
rn1907fs rn1909fs.pdf pdf_icon

RN1907FE

RN1907FS RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1907FS, RN1908FS, RN1909FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 1.0 0.05 0.8 0.05 0.1 0.05 0.1 0.05 Two devices are incorporated into a fine pitch small mold (6-pin) package. 1 6 Incorporating a bi

 8.1. Size:139K  toshiba
rn1907-rn1909.pdf pdf_icon

RN1907FE

RN1907 RN1909 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1907,RN1908,RN1909 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary

 8.2. Size:146K  toshiba
rn1907afs rn1909afs.pdf pdf_icon

RN1907FE

RN1907AFS RN1909AFS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN1907AFS, RN1908AFS, RN1909AFS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 1.0 0.05 0.8 0.05 0.1 0.05 0.1 0.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) 1 6 package. Incorpora

Otros transistores... RN1905FE , RN1905FS , RN1905 , RN1906AFS , RN1906FE , RN1906FS , RN1906 , RN1907AFS , 2SC2655 , RN1907FS , RN1907 , RN1908AFS , RN1908FE , RN1908FS , RN1908 , RN1909AFS , RN1909FE .

History: 2SD1724 | 2SC5809 | BC177AP | 2SA811C7 | BFX37L | DDC123JH | 2SC4272

 

 
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