RN1912FS Todos los transistores

 

RN1912FS . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RN1912FS
   Código: FH
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 22 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.05 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 1.2 pF
   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: SOT963 FS6

 Búsqueda de reemplazo de transistor bipolar RN1912FS

 

RN1912FS Datasheet (PDF)

 ..1. Size:141K  toshiba
rn1912fs rn1913fs.pdf pdf_icon

RN1912FS

RN1912FS,RN1913FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1912FS,RN1913FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit mm Two devices are incorporated into a fine pitch Small Mold (6 pin) 1.0 0.05 package. 0.8 0.05 0.1 0.05 0.1 0.05 Incorporating a bias resistor into

 8.1. Size:133K  toshiba
rn1912afs rn1913afs.pdf pdf_icon

RN1912FS

RN1912AFS, RN1913AFS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN1912AFS, RN1913AFS Switching, Inverter Circuit, Interface Circuit and Unit mm 1.0 0.05 Driver Circuit Applications 0.8 0.05 0.1 0.05 0.1 0.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 1 6 Incorporating a bias

 9.1. Size:133K  toshiba
rn1910afs rn1911afs.pdf pdf_icon

RN1912FS

RN1910AFS, RN1911AFS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN1910AFS, RN1911AFS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 1.0 0.05 0.8 0.05 0.1 0.05 0.1 0.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 1 6 Incorporating a bia

 9.2. Size:145K  toshiba
rn1910fe-rn1911fe.pdf pdf_icon

RN1912FS

RN1910FE,RN1911FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1910FE,RN1911FE Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing

Otros transistores... RN1910FE , RN1910FS , RN1910 , RN1911AFS , RN1911FE , RN1911FS , RN1911 , RN1912AFS , 2N2907 , RN1913AFS , RN1913FS , RN1961CT , RN1961FE , RN1961FS , RN1961 , RN1962CT , RN1962FE .

History: UN621K | MMBTSC1623G | KTC5197 | AC194 | 2SC2954 | KD3773 | 2SD1848

 

 
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