RN1913AFS Todos los transistores

 

RN1913AFS . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RN1913AFS
   Código: CJ
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 47 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.05 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.08 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 0.7 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT963 FS6

 Búsqueda de reemplazo de transistor bipolar RN1913AFS

 

RN1913AFS Datasheet (PDF)

 ..1. Size:133K  toshiba
rn1912afs rn1913afs.pdf

RN1913AFS
RN1913AFS

RN1912AFS, RN1913AFS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN1912AFS, RN1913AFS Switching, Inverter Circuit, Interface Circuit and Unit: mm1.00.05Driver Circuit Applications 0.80.05 0.10.050.10.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 1 6 Incorporating a bias

 8.1. Size:141K  toshiba
rn1912fs rn1913fs.pdf

RN1913AFS
RN1913AFS

RN1912FS,RN1913FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1912FS,RN1913FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm Two devices are incorporated into a fine pitch Small Mold (6 pin) 1.00.05package. 0.80.05 0.10.050.10.05 Incorporating a bias resistor into

 9.1. Size:133K  toshiba
rn1910afs rn1911afs.pdf

RN1913AFS
RN1913AFS

RN1910AFS, RN1911AFS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN1910AFS, RN1911AFS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 1 6 Incorporating a bia

 9.2. Size:145K  toshiba
rn1910fe-rn1911fe.pdf

RN1913AFS
RN1913AFS

RN1910FE,RN1911FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1910FE,RN1911FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing

 9.3. Size:120K  toshiba
rn1910fs rn1911fs.pdf

RN1913AFS
RN1913AFS

RN1910FS,RN1911FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1910FS,RN1911FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.05 Two devices are incorporated into a fine pitch small mold (6-pin) 0.80.05 0.10.050.10.05package. Incorporating a bias resistor into a

 9.4. Size:111K  toshiba
rn1910-rn1911.pdf

RN1913AFS
RN1913AFS

RN1910,RN1911 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1910,RN1911 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2910,

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